Inventor
HUNG LIEN-JUNG
TW73 patents
⚠️ This page may combine multiple inventors who share the name “HUNG LIEN-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS10050045B1Aug 14, 2018
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US11728227B1Aug 15, 2023
Test structure and test method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US11527539B2Dec 13, 2022
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11444197B2Sep 13, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404426B2Aug 2, 2022
Controlling trap formation to improve memory window in one-time program devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11393831B2Jul 19, 2022
Optimized static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11257817B2Feb 22, 2022
Integrated chip with improved latch-up immunity
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522553B2Dec 31, 2019
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11552084B2Jan 10, 2023
Shared bit lines for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11315933B2Apr 26, 2022
SRAM structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations70
US12495547B2Dec 9, 2025
Controlling trap formation to improve memory window in one-time program devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446284B2Oct 14, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363893B2Jul 15, 2025
Semiconductor memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12349329B2Jul 1, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12302609B2May 13, 2025
Semiconductor device including alternating semiconductor layers with different widths and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12200921B2Jan 14, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11980016B2May 7, 2024
Connection between source/drain and gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11961769B2Apr 16, 2024
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11956948B2Apr 9, 2024
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856768B2Dec 26, 2023
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11792977B2Oct 17, 2023
Semiconductor memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11737260B2Aug 22, 2023
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11678474B2Jun 13, 2023
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11563013B2Jan 24, 2023
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11495503B2Nov 8, 2022
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11450673B2Sep 20, 2022
Connection between source/drain and gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11367494B2Jun 21, 2022
Memory structure with doping-induced leakage paths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11348929B2May 31, 2022
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11296095B2Apr 5, 2022
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11062963B2Jul 13, 2021
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12593459B2Mar 31, 2026
Backside memory integration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12588180B2Mar 24, 2026
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12532446B2Jan 20, 2026
Fin-based well straps for improving memory macro performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12495571B2Dec 9, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426226B2Sep 23, 2025
Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12374590B2Jul 29, 2025
Test structure and test method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12367925B2Jul 22, 2025
Static random access memory layout
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349330B2Jul 1, 2025
Shared pick-up regions for memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336281B2Jun 17, 2025
Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12178032B2Dec 24, 2024
Source/drain feature separation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080604B2Sep 3, 2024
Gate-all-around semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12048135B2Jul 23, 2024
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12016169B2Jun 18, 2024
Optimized static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009428B2Jun 11, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11996338B2May 28, 2024
Test structure and test method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942145B2Mar 26, 2024
Static random access memory layout
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11937415B2Mar 19, 2024
Fin-based well straps for improving memory macro performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsDOONG YIH-YUH
1 patentShowing the top 50 of 73 patents by PatentIndex Score.