Inventor
MORI HARUHISA
JP12 patents
⚠️ This page may combine multiple inventors who share the name “MORI HARUHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
11 patentsUS4375993AMar 8, 1983
Method of producing a semiconductor device by simultaneous multiple laser annealing
FUJITSU LTD84 citations96
US4381202AApr 26, 1983
Selective epitaxy by beam energy and devices thereon
FUJITSU LTD33 citations92
US4788473ANov 29, 1988
Plasma generating device with stepped waveguide transition
FUJITSU LTD33 citations91
US4889820ADec 26, 1989
Method of producing a semiconductor device
FUJITSU LTD23 citations81
US4500365AFeb 19, 1985
Laser treating implanted semiconductor surface through photo-resist layer
FUJITSU LTD20 citations81
US4806769AFeb 21, 1989
Disk exchangeable target mechanism with effective cooling means, for ion implantation system
FUJITSU LTD12 citations73
US4803884AFeb 14, 1989
Method for measuring lattice defects in semiconductor
FUJITSU LTD17 citations73
US4258077AMar 24, 1981
Method of ion implantation into a semiconductor substrate provided with an insulating film
FUJITSU LTD12 citations73
US4785188ANov 15, 1988
Primary particle beam irradiation apparatus and method of irradiation thereof
FUJITSU LTD16 citations70
US5795494AAug 18, 1998
Semiconductor substrate cleaning method and semiconductor device fabrication method
FUJITSU LTD14 citations69
US4410801AOct 18, 1983
Ion implantation equipment
FUJITSU LTD5 citations62