Inventor
INUISHI MASAHIDE
JP22 patents
Patents
22 patentsUS5369297ANov 29, 1994
Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP57 citations96
US5258319ANov 2, 1993
Method of manufacturing a MOS type field effect transistor using an oblique ion implantation step
MITSUBISHI ELECTRIC CORP95 citations96
US5183771AFeb 2, 1993
Method of manufacturing lddfet having double sidewall spacers
MITSUBISHI ELECTRIC CORP50 citations96
US5146291ASep 8, 1992
MIS device having lightly doped drain structure
MITSUBISHI ELECTRIC CORP91 citations96
US5648284AJul 15, 1997
Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP28 citations92
US5554876ASep 10, 1996
Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
MITSUBISHI ELECTRIC CORP19 citations92
US5446305AAug 29, 1995
Semiconductor device with double structured well
MITSUBISHI ELECTRIC CORP20 citations92
US5217913AJun 8, 1993
Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
MITSUBISHI ELECTRIC CORP48 citations92
US5089865AFeb 18, 1992
Mis semiconductor device
MITSUBISHI ELECTRIC CORP29 citations92
US5061975AOct 29, 1991
MOS type field effect transistor having LDD structure
MITSUBISHI ELECTRIC CORP34 citations92
US4918500AApr 17, 1990
Semiconductor device having trench capacitor and manufacturing method therefor
MITSUBISHI ELECTRIC CORP21 citations82
US6420763B1Jul 16, 2002
Semiconductor device having a retrograde well structure and method of manufacturing thereof
MITSUBISHI ELECTRIC CORP9 citations74
US5536665AJul 16, 1996
Method of manufacturing a semiconductor device with double structured well
MITSUBISHI ELECTRIC CORP11 citations74
US5268321ADec 7, 1993
Method of making DRAM cell having improved radiation protection
MITSUBISHI ELECTRIC CORP7 citations74
US5258321ANov 2, 1993
Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation
MITSUBISHI ELECTRIC CORP15 citations74
US5200353AApr 6, 1993
Method of manufacturing a semiconductor device having trench capacitor
MITSUBISHI ELECTRIC CORP12 citations74
US4942448AJul 17, 1990
Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor
MITSUBISHI ELECTRIC CORP9 citations74
US4702797AOct 27, 1987
Method of manufacturing semiconductor memory device
MITSUBISHI ELECTRIC CORP16 citations74
US5852327ADec 22, 1998
Semiconductor device
MITSUBISHI ELECTRIC CORP7 citations68
US5166763ANov 24, 1992
Static type semiconductor memory device and method of manufacturing thereof
MITSUBISHI ELECTRIC CORP3 citations63
US5023682AJun 11, 1991
Semiconductor memory device
MITSUBISHI ELECTRIC CORP6 citations63
US5200918AApr 6, 1993
Static semiconductor memory with polysilicon source drain transistors
MITSUBISHI ELECTRIC CORP0 citations42