Inventor
KIM KEON-SOO
KR39 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEON-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS5801416ASep 1, 1998
FET having gate insulating film of nonuniform thickness and asymmetrical source and drain structures
SAMSUNG ELECTRONICS CO LTD125 citations98
US5789293AAug 4, 1998
Nonvolatile memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD102 citations97
US6130838AOct 10, 2000
Structure nonvolatile semiconductor memory cell array and method for fabricating same
SAMSUNG ELECTRONICS CO LTD79 citations96
US5326999AJul 5, 1994
Non-volatile semiconductor memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD104 citations96
US6483749B1Nov 19, 2002
Nonvolatile memory device having bulk bias contact structure in cell array region
SAMSUNG ELECTRONICS CO LTD86 citations95
US6027971AFeb 22, 2000
Methods of forming memory devices having protected gate electrodes
SAMSUNG ELECTRONICS CO LTD55 citations95
US6071775AJun 6, 2000
Methods for forming peripheral circuits including high voltage transistors with LDD structures
SAMSUNG ELECTRONICS CO LTD38 citations92
US5977584ANov 2, 1999
Memory devices containing dual-string NOR memory arrays therein
SAMSUNG ELECTRONICS CO LTD34 citations92
US5956588ASep 21, 1999
High withstand voltage transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD38 citations92
US5917218AJun 29, 1999
Peripheral circuits including high voltage transistors with LDD structures for nonvolatile memories
SAMSUNG ELECTRONICS CO LTD36 citations92
US5889305AMar 30, 1999
Non-volatile semiconductor memory device having storage cell array and peripheral circuit
SAMSUNG ELECTRONICS CO LTD24 citations92
US5834807ANov 10, 1998
Nonvolatile memory device having an improved integration and reduced contact failure
SAMSUNG ELECTRONICS CO LTD21 citations92
US5741719AApr 21, 1998
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD32 citations92
US5656527AAug 12, 1997
Method for fabricating a non-volatile semiconductor memory device having storage cell array and peripheral circuit, and a structure therefore
SAMSUNG ELECTRONICS CO LTD23 citations92
US4972100ANov 20, 1990
Data output buffer circuit for byte-wide memory
SAMSUNG ELECTRONICS CO LTD24 citations92
US5844270ADec 1, 1998
Flash memory device and manufacturing method therefor
SAMSUNG ELECTRONICS CO LTD25 citations91
US5821143AOct 13, 1998
Fabrication methods for nonvolatile memory devices including extended sidewall electrode
SAMSUNG ELECTRONICS CO LTD51 citations90
US8368182B2Feb 5, 2013
Semiconductor devices including patterns
SAMSUNG ELECTRONICS CO LTD16 citations84
US9735014B2Aug 15, 2017
Memory device
SAMSUNG ELECTRONICS CO LTD7 citations81
US6312990B1Nov 6, 2001
Structure nonvolatile semiconductor memory cell array and method for fabricating same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6144064ANov 7, 2000
Split-gate EEPROM device having floating gate with double polysilicon layer
SAMSUNG ELECTRONICS CO LTD15 citations73
US6056783AMay 2, 2000
Method for designing cell array layout of non-volatile memory device
SAMSUNG ELECTRONICS CO LTD7 citations71
US5747848AMay 5, 1998
Nonvolatile memory devices including arrays of discrete floating gate isolation regions
SAMSUNG ELECTRONICS CO LTD11 citations71
US7339242B2Mar 4, 2008
NAND-type flash memory devices and fabrication methods thereof
SAMSUNG ELECTRONICS CO LTD5 citations62
US5888871AMar 30, 1999
Methods of forming EEPROM memory cells having uniformly thick tunnelling oxide layers
SAMSUNG ELECTRONICS CO LTD5 citations62
US8829644B2Sep 9, 2014
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US7772069B2Aug 10, 2010
Methods of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US9087711B2Jul 21, 2015
Pattern structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10297451B2May 21, 2019
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
LEE YOUNG-HO
2 patentsKIM DONG-WON
2 patentsUS8129238B2Mar 6, 2012
Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same
KIM DONG-WON3 citations63
US8519484B2Aug 27, 2013
Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same
KIM DONG-WON1 citations52