P

Inventor

KIM KEON-SOO

KR39 patents
⚠️ This page may combine multiple inventors who share the name “KIM KEON-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US5801416ASep 1, 1998

FET having gate insulating film of nonuniform thickness and asymmetrical source and drain structures

SAMSUNG ELECTRONICS CO LTD125 citations98
US5789293AAug 4, 1998

Nonvolatile memory device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD102 citations97
US6130838AOct 10, 2000

Structure nonvolatile semiconductor memory cell array and method for fabricating same

SAMSUNG ELECTRONICS CO LTD79 citations96
US5326999AJul 5, 1994

Non-volatile semiconductor memory device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD104 citations96
US6483749B1Nov 19, 2002

Nonvolatile memory device having bulk bias contact structure in cell array region

SAMSUNG ELECTRONICS CO LTD86 citations95
US6027971AFeb 22, 2000

Methods of forming memory devices having protected gate electrodes

SAMSUNG ELECTRONICS CO LTD55 citations95
US6071775AJun 6, 2000

Methods for forming peripheral circuits including high voltage transistors with LDD structures

SAMSUNG ELECTRONICS CO LTD38 citations92
US5977584ANov 2, 1999

Memory devices containing dual-string NOR memory arrays therein

SAMSUNG ELECTRONICS CO LTD34 citations92
US5956588ASep 21, 1999

High withstand voltage transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD38 citations92
US5917218AJun 29, 1999

Peripheral circuits including high voltage transistors with LDD structures for nonvolatile memories

SAMSUNG ELECTRONICS CO LTD36 citations92
US5889305AMar 30, 1999

Non-volatile semiconductor memory device having storage cell array and peripheral circuit

SAMSUNG ELECTRONICS CO LTD24 citations92
US5834807ANov 10, 1998

Nonvolatile memory device having an improved integration and reduced contact failure

SAMSUNG ELECTRONICS CO LTD21 citations92
US5741719AApr 21, 1998

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD32 citations92
US5656527AAug 12, 1997

Method for fabricating a non-volatile semiconductor memory device having storage cell array and peripheral circuit, and a structure therefore

SAMSUNG ELECTRONICS CO LTD23 citations92
US4972100ANov 20, 1990

Data output buffer circuit for byte-wide memory

SAMSUNG ELECTRONICS CO LTD24 citations92
US5844270ADec 1, 1998

Flash memory device and manufacturing method therefor

SAMSUNG ELECTRONICS CO LTD25 citations91
US5821143AOct 13, 1998

Fabrication methods for nonvolatile memory devices including extended sidewall electrode

SAMSUNG ELECTRONICS CO LTD51 citations90
US8368182B2Feb 5, 2013

Semiconductor devices including patterns

SAMSUNG ELECTRONICS CO LTD16 citations84
US9735014B2Aug 15, 2017

Memory device

SAMSUNG ELECTRONICS CO LTD7 citations81
US6312990B1Nov 6, 2001

Structure nonvolatile semiconductor memory cell array and method for fabricating same

SAMSUNG ELECTRONICS CO LTD6 citations74
US6144064ANov 7, 2000

Split-gate EEPROM device having floating gate with double polysilicon layer

SAMSUNG ELECTRONICS CO LTD15 citations73
US6056783AMay 2, 2000

Method for designing cell array layout of non-volatile memory device

SAMSUNG ELECTRONICS CO LTD7 citations71
US5747848AMay 5, 1998

Nonvolatile memory devices including arrays of discrete floating gate isolation regions

SAMSUNG ELECTRONICS CO LTD11 citations71
US7339242B2Mar 4, 2008

NAND-type flash memory devices and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD5 citations62
US5888871AMar 30, 1999

Methods of forming EEPROM memory cells having uniformly thick tunnelling oxide layers

SAMSUNG ELECTRONICS CO LTD5 citations62
US8829644B2Sep 9, 2014

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US7772069B2Aug 10, 2010

Methods of forming a semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations61
US9087711B2Jul 21, 2015

Pattern structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10297451B2May 21, 2019

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations49

LEE YOUNG-HO

2 patents

KIM DONG-WON

2 patents

SIM JAE-HWANG

2 patents

KIM JONG-HYUK

1 patent

PARK YOON-MOON

1 patent

KIM HONG-SOO

1 patent

PARK YOON MOON

1 patent