Inventor
PARK JOON-SANG
KR22 patents
⚠️ This page may combine multiple inventors who share the name “PARK JOON-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS7291556B2Nov 6, 2007
Method for forming small features in microelectronic devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD118 citations97
US7384825B2Jun 10, 2008
Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact
SAMSUNG ELECTRONICS CO LTD21 citations92
US7265050B2Sep 4, 2007
Methods for fabricating memory devices using sacrificial layers
SAMSUNG ELECTRONICS CO LTD21 citations92
US7824954B2Nov 2, 2010
Methods of forming phase change memory devices having bottom electrodes
SAMSUNG ELECTRONICS CO LTD21 citations91
US7531456B2May 12, 2009
Method of forming self-aligned double pattern
SAMSUNG ELECTRONICS CO LTD29 citations91
US5595072AJan 21, 1997
Water current forming apparatus of washing machine
SAMSUNG ELECTRONICS CO LTD46 citations87
US6930054B2Aug 16, 2005
Slurry composition for use in chemical mechanical polishing of metal wiring
SAMSUNG ELECTRONICS CO LTD13 citations82
US7670942B2Mar 2, 2010
Method of fabricating self-aligned contact pad using chemical mechanical polishing process
SAMSUNG ELECTRONICS CO LTD6 citations74
US7097545B2Aug 29, 2006
Polishing pad conditioner and chemical mechanical polishing apparatus having the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US7804084B2Sep 28, 2010
Phase change memory elements having a confined portion of phase change material on a recessed contact
SAMSUNG ELECTRONICS CO LTD4 citations63
US8039829B2Oct 18, 2011
Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7781281B2Aug 24, 2010
Method of fabricating self-aligned contact pad using chemical mechanical polishing process
SAMSUNG ELECTRONICS CO LTD0 citations52
US7612359B2Nov 3, 2009
Microelectronic devices using sacrificial layers and structures fabricated by same
SAMSUNG ELECTRONICS CO LTD0 citations52