Inventor
LIN YI-TANG
TW64 patents
⚠️ This page may combine multiple inventors who share the name “LIN YI-TANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS9929133B2Mar 27, 2018
Semiconductor logic circuits fabricated using multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9553025B2Jan 24, 2017
Selective Fin-shaping process
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9953975B2Apr 24, 2018
Methods for forming STI regions in integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US11239365B2Feb 1, 2022
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10573751B2Feb 25, 2020
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515846B2Dec 24, 2019
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10128269B2Nov 13, 2018
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10062601B2Aug 28, 2018
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9917192B2Mar 13, 2018
Structure and method for transistors with line end extension
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9893056B2Feb 13, 2018
Multi-layer semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9673328B2Jun 6, 2017
Structure and method for providing line end extensions for fin-type active regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9646872B2May 9, 2017
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9634001B2Apr 25, 2017
System and methods for converting planar design to FinFET design
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9472672B2Oct 18, 2016
Eliminating fin mismatch using isolation last
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12087777B2Sep 10, 2024
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11784183B2Oct 10, 2023
Inter-level connection for multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532612B2Dec 20, 2022
Inter-level connection for multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11233140B2Jan 25, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10916469B2Feb 9, 2021
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9911850B2Mar 6, 2018
FinFETs and the methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9472550B2Oct 18, 2016
Adjusted fin width in integrated circuitry
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9443869B2Sep 13, 2016
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11450661B2Sep 20, 2022
Forming STI regions to separate semiconductor Fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879235B2Dec 29, 2020
Inter-level connection for multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734411B2Aug 4, 2020
Systems and methods for a semiconductor structure having multiple semiconductor-device layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8875076B2Oct 28, 2014
System and methods for converting planar design to FinFET design
TAIWAN SEMICONDUCTOR MFG35 citations93
US9368594B2Jun 14, 2016
Method of forming a fin-like BJT
TAIWAN SEMICONDUCTOR MFG11 citations84
US9202788B2Dec 1, 2015
Multi-layer semiconductor device structure
TAIWAN SEMICONDUCTOR MFG12 citations84
US9029958B2May 12, 2015
FinFETs and the methods for forming the same
TAIWAN SEMICONDUCTOR MFG9 citations84
US8806397B2Aug 12, 2014
Method and device for increasing fin device density for unaligned fins
TAIWAN SEMICONDUCTOR MFG5 citations84
US9379217B2Jun 28, 2016
FinFETs and the methods for forming the same
TAIWAN SEMICONDUCTOR MFG4 citations73
US9209201B2Dec 8, 2015
Systems and methods for integrating different channel materials into a CMOS circuit by using a semiconductor structure having multiple transistor layers
TAIWAN SEMICONDUCTOR MFG2 citations63
US9064797B2Jun 23, 2015
Systems and methods for dopant activation using pre-amorphization implantation and microwave radiation
TAIWAN SEMICONDUCTOR MFG2 citations63
WANN CLEMENT HSINGJEN
4 patentsUS8816444B2Aug 26, 2014
System and methods for converting planar design to FinFET design
WANN CLEMENT HSINGJEN1,298 citations99
US8946829B2Feb 3, 2015
Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications
WANN CLEMENT HSINGJEN17 citations92
US8963257B2Feb 24, 2015
Fin field effect transistors and methods for fabricating the same
WANN CLEMENT HSINGJEN8 citations84
US8799833B2Aug 5, 2014
System and methods for converting planar design to FinFET design
WANN CLEMENT HSINGJEN12 citations84
WANG CHIEN-HSUN
3 patentsUS8525267B2Sep 3, 2013
Device and method for forming Fins in integrated circuitry
WANG CHIEN-HSUN22 citations92
US8633076B2Jan 21, 2014
Method for adjusting fin width in integrated circuitry
WANG CHIEN-HSUN14 citations84
US8769446B2Jul 1, 2014
Method and device for increasing fin device density for unaligned fins
WANG CHIEN-HSUN3 citations62
HO CHIA-CHENG
2 patentsCHANG CHIH-SHENG
2 patentsYU SHAO-MING
1 patentSHIEH MING-FENG
1 patentLIN YI-TANG
1 patentLEI CHEOK-KEI
1 patentMOSAID TECH INCORPORATED
1 patentMOSAID TECHNOLOGIES INC
1 patentShowing the top 50 of 64 patents by PatentIndex Score.