Inventor
LEE DONG SEUP
US23 patents
⚠️ This page may combine multiple inventors who share the name “LEE DONG SEUP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
22 patentsUS10014231B1Jul 3, 2018
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
TEXAS INSTRUMENTS INC5 citations83
US10134596B1Nov 20, 2018
Recessed solid state apparatuses
TEXAS INSTRUMENTS INC2 citations73
US9741557B1Aug 22, 2017
Silicon nitride process for reduction of threshold shift
TEXAS INSTRUMENTS INC6 citations71
US11742390B2Aug 29, 2023
Electronic device with gallium nitride transistors and method of making same
TEXAS INSTRUMENTS INC2 citations67
US12520547B2Jan 6, 2026
Monolithic integration of high and low-side GaN FETS with screening back gating effect
TEXAS INSTRUMENTS INC0 citations62
US12166119B2Dec 10, 2024
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US11888027B2Jan 30, 2024
Monolithic integration of high and low-side GaN FETs with screening back gating effect
TEXAS INSTRUMENTS INC0 citations62
US11769824B2Sep 26, 2023
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US11067620B2Jul 20, 2021
HEMT wafer probe current collapse screening
TEXAS INSTRUMENTS INC1 citations62
US10964803B2Mar 30, 2021
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US10192799B2Jan 29, 2019
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
TEXAS INSTRUMENTS INC1 citations62
US12211835B2Jan 28, 2025
Group III-V IC with different sheet resistance 2-DEG resistors
TEXAS INSTRUMENTS INC0 citations61
US11527619B2Dec 13, 2022
Nitride-based semiconductor layer sharing between transistors
TEXAS INSTRUMENTS INC0 citations61
US12142639B2Nov 12, 2024
Electronic device with gallium nitride transistors and method of making same
TEXAS INSTRUMENTS INC0 citations57
US12532493B2Jan 20, 2026
Transistor with buffer structure having carbon doped profile
TEXAS INSTRUMENTS INC0 citations56
US11508830B2Nov 22, 2022
Transistor with buffer structure having carbon doped profile
TEXAS INSTRUMENTS INC1 citations56
US10861943B2Dec 8, 2020
Transistor with multiple GaN-based alloy layers
TEXAS INSTRUMENTS INC0 citations52
US10312095B1Jun 4, 2019
Recessed solid state apparatuses
TEXAS INSTRUMENTS INC0 citations52
US12444600B2Oct 14, 2025
Gallium nitride device having a combination of surface passivation layers
TEXAS INSTRUMENTS INC0 citations51
US11978790B2May 7, 2024
Normally-on gallium nitride based transistor with p-type gate
TEXAS INSTRUMENTS INC0 citations51
US10707324B2Jul 7, 2020
Group IIIA-N HEMT with a tunnel diode in the gate stack
TEXAS INSTRUMENTS INC0 citations51
US10381456B2Aug 13, 2019
Group IIIA-N HEMT with a tunnel diode in the gate stack
TEXAS INSTRUMENTS INC0 citations51