P

Inventor

LEE DONG SEUP

US23 patents
⚠️ This page may combine multiple inventors who share the name “LEE DONG SEUP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

22 patents
US10014231B1Jul 3, 2018

Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

TEXAS INSTRUMENTS INC5 citations83
US10134596B1Nov 20, 2018

Recessed solid state apparatuses

TEXAS INSTRUMENTS INC2 citations73
US9741557B1Aug 22, 2017

Silicon nitride process for reduction of threshold shift

TEXAS INSTRUMENTS INC6 citations71
US11742390B2Aug 29, 2023

Electronic device with gallium nitride transistors and method of making same

TEXAS INSTRUMENTS INC2 citations67
US12520547B2Jan 6, 2026

Monolithic integration of high and low-side GaN FETS with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US12166119B2Dec 10, 2024

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US11888027B2Jan 30, 2024

Monolithic integration of high and low-side GaN FETs with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US11769824B2Sep 26, 2023

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US11067620B2Jul 20, 2021

HEMT wafer probe current collapse screening

TEXAS INSTRUMENTS INC1 citations62
US10964803B2Mar 30, 2021

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US10192799B2Jan 29, 2019

Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

TEXAS INSTRUMENTS INC1 citations62
US12211835B2Jan 28, 2025

Group III-V IC with different sheet resistance 2-DEG resistors

TEXAS INSTRUMENTS INC0 citations61
US11527619B2Dec 13, 2022

Nitride-based semiconductor layer sharing between transistors

TEXAS INSTRUMENTS INC0 citations61
US12142639B2Nov 12, 2024

Electronic device with gallium nitride transistors and method of making same

TEXAS INSTRUMENTS INC0 citations57
US12532493B2Jan 20, 2026

Transistor with buffer structure having carbon doped profile

TEXAS INSTRUMENTS INC0 citations56
US11508830B2Nov 22, 2022

Transistor with buffer structure having carbon doped profile

TEXAS INSTRUMENTS INC1 citations56
US10861943B2Dec 8, 2020

Transistor with multiple GaN-based alloy layers

TEXAS INSTRUMENTS INC0 citations52
US10312095B1Jun 4, 2019

Recessed solid state apparatuses

TEXAS INSTRUMENTS INC0 citations52
US12444600B2Oct 14, 2025

Gallium nitride device having a combination of surface passivation layers

TEXAS INSTRUMENTS INC0 citations51
US11978790B2May 7, 2024

Normally-on gallium nitride based transistor with p-type gate

TEXAS INSTRUMENTS INC0 citations51
US10707324B2Jul 7, 2020

Group IIIA-N HEMT with a tunnel diode in the gate stack

TEXAS INSTRUMENTS INC0 citations51
US10381456B2Aug 13, 2019

Group IIIA-N HEMT with a tunnel diode in the gate stack

TEXAS INSTRUMENTS INC0 citations51

MASSACHUSETTS INST TECHNOLOGY

1 patent