P

Inventor

JOH JUNGWOO

US28 patents
⚠️ This page may combine multiple inventors who share the name “JOH JUNGWOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

26 patents
US8759879B1Jun 24, 2014

RESURF III-nitride HEMTs

TEXAS INSTRUMENTS INC42 citations94
US9882041B1Jan 30, 2018

HEMT having conduction barrier between drain fingertip and source

TEXAS INSTRUMENTS INC8 citations84
US9054027B2Jun 9, 2015

III-nitride device and method having a gate isolating structure

TEXAS INSTRUMENTS INC9 citations84
US10014231B1Jul 3, 2018

Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

TEXAS INSTRUMENTS INC5 citations83
US10680093B2Jun 9, 2020

HEMT having conduction barrier between drain fingertip and source

TEXAS INSTRUMENTS INC2 citations73
US9553151B2Jan 24, 2017

III-nitride device and method having a gate isolating structure

TEXAS INSTRUMENTS INC2 citations73
US9476933B2Oct 25, 2016

Apparatus and methods for qualifying HEMT FET devices

TEXAS INSTRUMENTS INC6 citations73
US12520547B2Jan 6, 2026

Monolithic integration of high and low-side GaN FETS with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US12166119B2Dec 10, 2024

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US12027468B2Jul 2, 2024

Strapped copper interconnect for improved electromigration reliability

TEXAS INSTRUMENTS INC0 citations62
US11888027B2Jan 30, 2024

Monolithic integration of high and low-side GaN FETs with screening back gating effect

TEXAS INSTRUMENTS INC0 citations62
US11769824B2Sep 26, 2023

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US11177378B2Nov 16, 2021

HEMT having conduction barrier between drain fingertip and source

TEXAS INSTRUMENTS INC0 citations62
US11067620B2Jul 20, 2021

HEMT wafer probe current collapse screening

TEXAS INSTRUMENTS INC1 citations62
US10964803B2Mar 30, 2021

Gallium nitride transistor with a doped region

TEXAS INSTRUMENTS INC0 citations62
US10192799B2Jan 29, 2019

Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices

TEXAS INSTRUMENTS INC1 citations62
US12113062B2Oct 8, 2024

Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitor

TEXAS INSTRUMENTS INC0 citations61
US12046666B2Jul 23, 2024

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

TEXAS INSTRUMENTS INC0 citations61
US11049960B2Jun 29, 2021

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

TEXAS INSTRUMENTS INC0 citations61
US10861943B2Dec 8, 2020

Transistor with multiple GaN-based alloy layers

TEXAS INSTRUMENTS INC0 citations52
US12444600B2Oct 14, 2025

Gallium nitride device having a combination of surface passivation layers

TEXAS INSTRUMENTS INC0 citations51
US11978790B2May 7, 2024

Normally-on gallium nitride based transistor with p-type gate

TEXAS INSTRUMENTS INC0 citations51
US10707324B2Jul 7, 2020

Group IIIA-N HEMT with a tunnel diode in the gate stack

TEXAS INSTRUMENTS INC0 citations51
US10381456B2Aug 13, 2019

Group IIIA-N HEMT with a tunnel diode in the gate stack

TEXAS INSTRUMENTS INC0 citations51
US9112011B2Aug 18, 2015

FET dielectric reliability enhancement

TEXAS INSTRUMENTS INC0 citations51
US8916427B2Dec 23, 2014

FET dielectric reliability enhancement

TEXAS INSTRUMENTS INC0 citations51

KOREA ELECTRONICS TELECOMM

1 patent

TEXAS INSTR INCORPORATED

1 patent