Inventor
JOH JUNGWOO
US28 patents
⚠️ This page may combine multiple inventors who share the name “JOH JUNGWOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
26 patentsUS8759879B1Jun 24, 2014
RESURF III-nitride HEMTs
TEXAS INSTRUMENTS INC42 citations94
US9882041B1Jan 30, 2018
HEMT having conduction barrier between drain fingertip and source
TEXAS INSTRUMENTS INC8 citations84
US9054027B2Jun 9, 2015
III-nitride device and method having a gate isolating structure
TEXAS INSTRUMENTS INC9 citations84
US10014231B1Jul 3, 2018
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
TEXAS INSTRUMENTS INC5 citations83
US10680093B2Jun 9, 2020
HEMT having conduction barrier between drain fingertip and source
TEXAS INSTRUMENTS INC2 citations73
US9553151B2Jan 24, 2017
III-nitride device and method having a gate isolating structure
TEXAS INSTRUMENTS INC2 citations73
US9476933B2Oct 25, 2016
Apparatus and methods for qualifying HEMT FET devices
TEXAS INSTRUMENTS INC6 citations73
US12520547B2Jan 6, 2026
Monolithic integration of high and low-side GaN FETS with screening back gating effect
TEXAS INSTRUMENTS INC0 citations62
US12166119B2Dec 10, 2024
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US12027468B2Jul 2, 2024
Strapped copper interconnect for improved electromigration reliability
TEXAS INSTRUMENTS INC0 citations62
US11888027B2Jan 30, 2024
Monolithic integration of high and low-side GaN FETs with screening back gating effect
TEXAS INSTRUMENTS INC0 citations62
US11769824B2Sep 26, 2023
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US11177378B2Nov 16, 2021
HEMT having conduction barrier between drain fingertip and source
TEXAS INSTRUMENTS INC0 citations62
US11067620B2Jul 20, 2021
HEMT wafer probe current collapse screening
TEXAS INSTRUMENTS INC1 citations62
US10964803B2Mar 30, 2021
Gallium nitride transistor with a doped region
TEXAS INSTRUMENTS INC0 citations62
US10192799B2Jan 29, 2019
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
TEXAS INSTRUMENTS INC1 citations62
US12113062B2Oct 8, 2024
Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitor
TEXAS INSTRUMENTS INC0 citations61
US12046666B2Jul 23, 2024
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
TEXAS INSTRUMENTS INC0 citations61
US11049960B2Jun 29, 2021
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
TEXAS INSTRUMENTS INC0 citations61
US10861943B2Dec 8, 2020
Transistor with multiple GaN-based alloy layers
TEXAS INSTRUMENTS INC0 citations52
US12444600B2Oct 14, 2025
Gallium nitride device having a combination of surface passivation layers
TEXAS INSTRUMENTS INC0 citations51
US11978790B2May 7, 2024
Normally-on gallium nitride based transistor with p-type gate
TEXAS INSTRUMENTS INC0 citations51
US10707324B2Jul 7, 2020
Group IIIA-N HEMT with a tunnel diode in the gate stack
TEXAS INSTRUMENTS INC0 citations51
US10381456B2Aug 13, 2019
Group IIIA-N HEMT with a tunnel diode in the gate stack
TEXAS INSTRUMENTS INC0 citations51
US9112011B2Aug 18, 2015
FET dielectric reliability enhancement
TEXAS INSTRUMENTS INC0 citations51
US8916427B2Dec 23, 2014
FET dielectric reliability enhancement
TEXAS INSTRUMENTS INC0 citations51