Inventor

NGU YVES T

US19 patents

⚠️ This page may combine multiple inventors who share the name “NGU YVES T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NGU YVES T

GLOBALFOUNDRIES US INC

Structure including resistor network for back biasing FET stack

Active attack prevention for secure integrated circuits using latchup sensitive diode circuit

Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer

Integrated circuit structure with fluorescent material, and related methods

Structure providing poly-resistor under shallow trench isolation and above high resistivity polysilicon layer

Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder

Non-planar silicided semiconductor electrical fuse

Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method

Anti-tamper x-ray blocking package

Method and related structure to authenticate integrated circuit with authentication film

Electronic fuse (e-fuse) cells integrated with bipolar device

Bipolar transistor with stepped emitter

Semiconductor structure with in-device high resistivity polycrystalline semiconductor element and method

IBM

Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance

Multilevel waveguide structure

MEMS based photonic devices and methods for forming

Integrated circuit having redundant optical signal paths and method of creating same

GLOBALFOUNDRIES INC

Optical through silicon via

Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias