Inventor

PRIYADARSHINI DEEPIKA

US59 patents

⚠️ This page may combine multiple inventors who share the name “PRIYADARSHINI DEEPIKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PRIYADARSHINI DEEPIKA

IBM

Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect

Air gap semiconductor structure with selective cap bilayer

Air gap and air spacer pinch off

Substrate bonding with diffusion barrier structures

Copper interconnect structure with manganese oxide barrier layer

Copper interconnect structure with manganese oxide barrier layer

Copper interconnect structure with manganese oxide barrier layer

Method of forming a copper based interconnect structure

Interconnect structure with barrier layer

Interconnect structure with capping layer and barrier layer

Air gap and air spacer pinch off

Air gap and air spacer pinch off

Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Interconnect structure containing a porous low k interconnect dielectric/dielectric cap

Advanced ultra low k SiCOH dielectrics prepared by built-in engineered pore size and bonding structured with cyclic organosilicon precursors

Wafer-to-wafer oxide fusion bonding

Method of forming an air gap semiconductor structure with selective cap bilayer

Multilayer dielectric structures for semiconductor nano-devices

Multilayer dielectric structures for semiconductor nano-devices

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices

Composite manganese nitride/low-K dielectric cap

Hydrogen-free silicon-based deposited dielectric films for nano device fabrication

Air gap semiconductor structure with selective cap bilayer

Separate N and P fin etching for reduced CMOS device leakage

Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same

Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same

Composite manganese nitride / low-k dielectric cap

Structure and method for equal substrate to channel height between N and P fin-FETs

Low-temperature diffusion doping of copper interconnects independent of seed layer composition

Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same

Air gap and air spacer pinch off

Air gap and air spacer pinch off

Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices

Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Air gap and air spacer pinch off

Edge trim processes and resultant structures

Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects

Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects

Hydrogen-free silicon-based deposited dielectric films for nano device fabrication

TESSERA INC

Interconnect structure

Copper interconnect structure with manganese barrier layer

Interconnect structure

GLOBALFOUNDRIES INC

Substrate bonding with diffusion barrier structures

Wafer bonding for 3D device packaging fabrication

TESSERA LLC

Method of forming copper interconnect structure with manganese barrier layer