Inventor
KELLY ANDREW JOSEPH
TW35 patents
⚠️ This page may combine multiple inventors who share the name “KELLY ANDREW JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9324820B1Apr 26, 2016
Method for forming semiconductor structure with metallic layer over source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations92
US11437480B2Sep 6, 2022
Forming a cavity with a wet etch for backside contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10163623B1Dec 25, 2018
Etch method with surface modification treatment for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9385197B2Jul 5, 2016
Semiconductor structure with contact over source/drain structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11942527B2Mar 26, 2024
Forming a cavity with a wet etch for backside contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11145544B2Oct 12, 2021
Contact etchback in room temperature ionic liquid
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10763114B2Sep 1, 2020
Method of fabricating gate oxide of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9911806B2Mar 6, 2018
Solvent-based oxidation on germanium and III-V compound semiconductor materials
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12272733B2Apr 8, 2025
Transistor device for source/drain backside contact and method of forming cavity
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11869769B2Jan 9, 2024
Method and system of control of epitaxial growth
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728169B2Aug 15, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11600716B2Mar 7, 2023
Method for forming semiconductor structure with contact over source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257671B2Feb 22, 2022
Method and system of control of epitaxial growth
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11101149B2Aug 24, 2021
Semiconductor fabrication with electrochemical apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
USRE48942EFeb 22, 2022
FinFET device with epitaxial structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10854736B2Dec 1, 2020
Method for forming semiconductor structure with contact over source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10720344B2Jul 21, 2020
Semiconductor fabrication with electrochemical apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468275B2Nov 5, 2019
Semiconductor fabrication with electrochemical apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10056472B2Aug 21, 2018
Method for forming semiconductor structure with contact over source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9882017B2Jan 30, 2018
Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water soluble
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9761440B2Sep 12, 2017
Surface passivation on indium-based materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412605B2Aug 9, 2016
Method of removing oxide on semiconductor surface by layer of sulfur
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US12506029B2Dec 23, 2025
Gap filling method in semiconductor manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US10134871B2Nov 20, 2018
Doping of high-K dielectric oxide by wet chemical treatment
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9166010B2Oct 20, 2015
FinFET device with epitaxial structure
TAIWAN SEMICONDUCTOR MFG49 citations96
US9029930B2May 12, 2015
FinFET device with epitaxial structure
TAIWAN SEMICONDUCTOR MFG28 citations93
US9177785B1Nov 3, 2015
Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water soluble
TAIWAN SEMICONDUCTOR MFG14 citations84
US9240484B2Jan 19, 2016
FinFET with metal gate stressor
TAIWAN SEMICONDUCTOR MFG4 citations72
US9054213B2Jun 9, 2015
FinFET with metal gate stressor
TAIWAN SEMICONDUCTOR MFG2 citations62
US9373549B2Jun 21, 2016
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations52