Inventor
BENJAMIN JAMES A
US40 patents
⚠️ This page may combine multiple inventors who share the name “BENJAMIN JAMES A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EATON CORP
32 patentsUS4668304AMay 26, 1987
Dopant gettering semiconductor processing by excimer laser
EATON CORP53 citations96
US4541001ASep 10, 1985
Bidirectional power FET with substrate-referenced shield
EATON CORP64 citations96
US4685976AAug 11, 1987
Multi-layer semiconductor processing with scavenging between layers by excimer laser
EATON CORP47 citations92
US4670064AJun 2, 1987
Generating high purity ions by non-thermal excimer laser processing
EATON CORP34 citations92
US4670063AJun 2, 1987
Semiconductor processing technique with differentially fluxed radiation at incremental thicknesses
EATON CORP39 citations92
US4655849AApr 7, 1987
Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser
EATON CORP40 citations92
US4612465ASep 16, 1986
Lateral bidirectional notch FET with gates at non-common potentials
EATON CORP33 citations92
US4577052AMar 18, 1986
AC Solar cell
EATON CORP28 citations92
US4574208AMar 4, 1986
Raised split gate EFET and circuitry
EATON CORP32 citations92
US4574209AMar 4, 1986
Split gate EFET and circuitry
EATON CORP34 citations92
US4553151ANov 12, 1985
Bidirectional power FET with field shaping
EATON CORP27 citations92
US4546367AOct 8, 1985
Lateral bidirectional notch FET with extended gate insulator
EATON CORP56 citations92
US4670764AJun 2, 1987
Multi-channel power JFET with buried field shaping regions
EATON CORP22 citations82
US4622568ANov 11, 1986
Planar field-shaped bidirectional power FET
EATON CORP23 citations82
US4622569ANov 11, 1986
Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means
EATON CORP23 citations82
US4571606AFeb 18, 1986
High density, high voltage power FET
EATON CORP22 citations82
US4571513AFeb 18, 1986
Lateral bidirectional dual notch shielded FET
EATON CORP21 citations82
US4542396ASep 17, 1985
Trapped charge bidirectional power FET
EATON CORP20 citations82
US4675980AJun 30, 1987
Method for making vertically layered MOMOM tunnel device
EATON CORP5 citations74
US4633281ADec 30, 1986
Dual stack power JFET with buried field shaping depletion regions
EATON CORP9 citations74
US4577208AMar 18, 1986
Bidirectional power FET with integral avalanche protection
EATON CORP14 citations74
US4574207AMar 4, 1986
Lateral bidirectional dual notch FET with non-planar main electrodes
EATON CORP17 citations74
US4571512AFeb 18, 1986
Lateral bidirectional shielded notch FET
EATON CORP17 citations74
US4558243ADec 10, 1985
Bidirectional power FET with shorting-channel off state
EATON CORP8 citations74
US4533783AAug 6, 1985
AC solar cell with alternately generated pn junctions
EATON CORP13 citations74
US4511818AApr 16, 1985
Piezoelectric generator driven by a combustion engine
EATON CORP12 citations74
US4459181AJul 10, 1984
Semiconductor pattern definition by selective anodization
EATON CORP11 citations74
US4675979AJun 30, 1987
Method for making horizontally layered momom tunnel device
EATON CORP3 citations63
US4642665AFeb 10, 1987
Vertically layered MOMOM tunnel device
EATON CORP4 citations63
US4635084AJan 6, 1987
Split row power JFET
EATON CORP4 citations63
US4633278ADec 30, 1986
Horizontally layered MOMOM notch tunnel device
EATON CORP2 citations63
US4624533ANov 25, 1986
Solid state display
EATON CORP0 citations42