Inventor

SHIN HEON-JONG

KR57 patents

⚠️ This page may combine multiple inventors who share the name “SHIN HEON-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIN HEON-JONG

SAMSUNG ELECTRONICS CO LTD

Method of making semiconductor device having double spacer

Semiconductor device having spacer and method of making same

Integrated circuit device including dummy patterns surrounding pads

MOS transistor for high-speed and high-performance operation and manufacturing method thereof

Method for forming side contact in a semiconductor device

Semiconductor interconnection device with both n- and p-doped regions

Method for manufacturing self-aligned BiCMOS

Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same

Semiconductor memory devices including a damascene wiring line

Methods of forming silicide layers on source/drain regions of MOS transistors

Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same

MOS transistor for high-speed operation

Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Semiconductor device having a metal via

Dual-damascene metal wiring patterns for integrated circuit devices

Semiconductor device including a charge-dispersing region and fabricating method thereof

Manufacturing of gate electrodes having silicon of different grain sizes and different surface roughness

Methods of fabricating field effect transistors by first forming heavily doped source/drain regions and then forming lightly doped source/drain regions

Contact structure for semiconductor device and the manufacturing method thereof

Semiconductor devices and methods of forming the same

Integrated circuit SRAM cell layouts

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Semiconductor devices including contact plugs

Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device

Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure

Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current

Semiconductor device and method of fabricating the same

Semiconductor device having pads

MOS transistor for high-speed and high-performance operation and manufacturing method thereof

Semiconductor device including a charge-dispersing region and fabricating method thereof

Method of manufacturing doped interconnect

Semiconductor devices and methods of forming the same

Semiconductor devices and methods of forming the same

Semiconductor devices and methods of forming the same

Integrated circuit SRAM cell layouts

Semiconductor devices including contact plugs

Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device

Structure for forming an improved quality silicidation layer

Method of manufacturing a semiconductor device having a node capping pattern and a gate capping pattern

Semiconductor device having a node capping pattern and a gate capping pattern

Semiconductor device structure with strain layer

Semiconductor devices having lower and upper fins and method for fabricating the same

KIM SUNG MIN

Semiconductor devices and methods of forming the same

Semiconductor devices having lower and upper fins and method for fabricating the same

JUN HWI-CHAN

Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures

Methods for fabricating semiconductor devices

YOO ABRAHAM

Shared contact structure, semiconductor device and method of fabricating the semiconductor device