Inventor
YU HYE-SEUNG
KR12 patents
Patents
12 patentsUS9870808B2Jan 16, 2018
Memory device for performing calibration operation
SAMSUNG ELECTRONICS CO LTD8 citations83
US10078110B2Sep 18, 2018
Short circuit detecting device of stacked memory chips and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US9966126B2May 8, 2018
Delay circuit of a semiconductor memory device, a semiconductor memory device and a method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US10243584B2Mar 26, 2019
Memory device including parity error detection circuit
SAMSUNG ELECTRONICS CO LTD4 citations70
US9959935B2May 1, 2018
Input-output circuit for supporting multiple-input shift register (MISR) function and memory device including the same
SAMSUNG ELECTRONICS CO LTD5 citations70
US10908212B2Feb 2, 2021
Semiconductor memory device including a shift register
SAMSUNG ELECTRONICS CO LTD0 citations62
US10938416B2Mar 2, 2021
Memory device including parity error detection circuit
SAMSUNG ELECTRONICS CO LTD1 citations59
US10651156B2May 12, 2020
Memory package and memory device utilizing an intermediate chip
SAMSUNG ELECTRONICS CO LTD1 citations58
US10509070B2Dec 17, 2019
Short circuit detecting device of stacked memory chips and method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US9379693B2Jun 28, 2016
Self bias buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9306569B2Apr 5, 2016
Compensation circuit for use with input buffer and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US12475933B2Nov 18, 2025
Memory module and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47