Inventor
HORIUCHI MASATADA
JP30 patents
⚠️ This page may combine multiple inventors who share the name “HORIUCHI MASATADA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
29 patentsUS6730964B2May 4, 2004
Semiconductor device and method of producing the same
HITACHI LTD150 citations99
US4769686ASep 6, 1988
Semiconductor device
HITACHI LTD170 citations99
US6004865ADec 21, 1999
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD45 citations96
US5523602AJun 4, 1996
Multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD61 citations96
US4668970AMay 26, 1987
Semiconductor device
HITACHI LTD27 citations93
US6800513B2Oct 5, 2004
Manufacturing semiconductor device including forming a buried gate covered by an insulative film and a channel layer
HITACHI LTD25 citations92
US6667199B2Dec 23, 2003
Semiconductor device having a replacement gate type field effect transistor and its manufacturing method
HITACHI LTD31 citations92
US6462364B1Oct 8, 2002
Semiconductor integrated circuit and method for manufacturing the same
HITACHI LTD32 citations92
US6313012B1Nov 6, 2001
Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator
HITACHI LTD30 citations92
US4633438ADec 30, 1986
Stacked semiconductor memory
HITACHI LTD48 citations92
US4514830AApr 30, 1985
Defect-remediable semiconductor integrated circuit memory and spare substitution method in the same
HITACHI LTD46 citations92
US3967310AJun 29, 1976
Semiconductor device having controlled surface charges by passivation films formed thereon
HITACHI LTD47 citations92
US6690060B2Feb 10, 2004
Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion
HITACHI LTD19 citations84
US6646296B2Nov 11, 2003
Semiconductor integrated circuit and method for manufacturing the same
HITACHI LTD14 citations84
US5227660AJul 13, 1993
Semiconductor device
HITACHI LTD18 citations82
US4295265AOct 20, 1981
Method for producing a nonvolatile semiconductor memory
HITACHI LTD23 citations82
US6744099B2Jun 1, 2004
MIS semiconductor device and manufacturing method thereof
HITACHI LTD9 citations74
US6538268B1Mar 25, 2003
Semiconductor device and method of producing the same
HITACHI LTD10 citations74
US5424575AJun 13, 1995
Semiconductor device for SOI structure having lead conductor suitable for fine patterning
HITACHI LTD7 citations74
US5391912AFeb 21, 1995
Semiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistor
HITACHI LTD15 citations74
US4949151AAug 14, 1990
Bipolar transistor having side wall base and collector contacts
HITACHI LTD12 citations74
US4887145ADec 12, 1989
Semiconductor device in which electrodes are formed in a self-aligned manner
HITACHI LTD18 citations74
US6157055ADec 5, 2000
Semiconductor memory device having a long data retention time with the increase in leakage current suppressed
HITACHI LTD6 citations73
US5237200AAug 17, 1993
Semiconductor bipolar transistor with concentric regions
HITACHI LTD13 citations73
US5109263AApr 28, 1992
Semiconductor device with optimal distance between emitter and trench isolation
HITACHI LTD11 citations73
US4209806AJun 24, 1980
Solid-state imaging device
HITACHI LTD14 citations73
US7001818B2Feb 21, 2006
MIS semiconductor device and manufacturing method thereof
HITACHI LTD5 citations63
US6329238B1Dec 11, 2001
Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressed
HITACHI LTD2 citations62
US6781202B2Aug 24, 2004
Semiconductor devices and their fabrication methods
HITACHI LTD1 citations51