Inventor
AIKAWA HISANORI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “AIKAWA HISANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
15 patentsUS7190613B2Mar 13, 2007
Magnetic random access memory device having thermal agitation property and high write efficiency
TOSHIBA KK47 citations93
US6927468B2Aug 9, 2005
Magnetic random access memory
TOSHIBA KK24 citations93
US6909130B2Jun 21, 2005
Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
TOSHIBA KK35 citations93
US7894246B2Feb 22, 2011
Magnetoresistive element and magnetic memory
TOSHIBA KK7 citations84
US6947314B2Sep 20, 2005
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK12 citations84
US7064402B2Jun 20, 2006
Magnetic random access memory
TOSHIBA KK8 citations74
US9653182B1May 16, 2017
Testing method, manufacturing method, and testing device of memory device
TOSHIBA KK5 citations73
US7848136B2Dec 7, 2010
Magnetic memory
TOSHIBA KK2 citations63
US7277318B2Oct 2, 2007
Magnetic random access memory and method of manufacturing the same
TOSHIBA KK2 citations63
US6984865B2Jan 10, 2006
Magnetic random access memory
TOSHIBA KK4 citations63
US6972923B2Dec 6, 2005
Magnetic recording medium and magnetic recording/reproducing apparatus using the same
TOSHIBA KK2 citations63
US7564109B2Jul 21, 2009
MRAM and method of manufacturing the same
TOSHIBA KK1 citations52
US7200034B2Apr 3, 2007
Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same
TOSHIBA KK1 citations52
US8378437B2Feb 19, 2013
Magnetoresistive effect element and magnetic random access memory
TOSHIBA KK0 citations42
US9076960B2Jul 7, 2015
Magnetic memory element
TOSHIBA KK0 citations41
TOSHIBA MEMORY CORP
6 patentsUS10230042B2Mar 12, 2019
Magnetoresistive element and method of manufacturing the same
TOSHIBA MEMORY CORP2 citations73
US10910032B2Feb 2, 2021
Magnetoresistive memory device with different write pulse patterns
TOSHIBA MEMORY CORP5 citations72
US10325640B2Jun 18, 2019
Magnetoresistive memory device with different write pulse patterns
TOSHIBA MEMORY CORP4 citations72
US10622545B2Apr 14, 2020
Magnetic memory device and method of manufacturing the same
TOSHIBA MEMORY CORP1 citations62
US10311929B2Jun 4, 2019
Resistance change memory
TOSHIBA MEMORY CORP1 citations60
US10867650B2Dec 15, 2020
Magnetic storage device
TOSHIBA MEMORY CORP0 citations42
AIKAWA HISANORI
5 patentsUS8878321B2Nov 4, 2014
Magnetoresistive element and producing method thereof
AIKAWA HISANORI4 citations72
US9203015B2Dec 1, 2015
Magnetic storage device
AIKAWA HISANORI2 citations61
US9640756B2May 2, 2017
Method for manufacturing magnetic memory
AIKAWA HISANORI0 citations51
US8530987B2Sep 10, 2013
Magnetic memory including a magnetoresistive element
AIKAWA HISANORI1 citations51
US9449892B2Sep 20, 2016
Manufacturing method of magnetic memory device
AIKAWA HISANORI0 citations39
KIOXIA CORP
3 patentsUS11335422B2May 17, 2022
Semiconductor memory device and memory system
KIOXIA CORP3 citations73
US12020737B2Jun 25, 2024
Memory device, memory system, and method of manufacturing memory device
KIOXIA CORP0 citations52
US12213386B2Jan 28, 2025
Magnetoresistance memory device and manufacturing method of magnetoresistance memory device
KIOXIA CORP0 citations51
NAKAYAMA MASAHIKO
3 patentsUS8120948B2Feb 21, 2012
Data writing method for magnetoresistive effect element and magnetic memory
NAKAYAMA MASAHIKO4 citations63
US8634238B2Jan 21, 2014
Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof
NAKAYAMA MASAHIKO2 citations62
US8169817B2May 1, 2012
Magnetoresistive device and magnetic random access memory
NAKAYAMA MASAHIKO5 citations62