Method for manufacturing magnetic memory

Abstract

According to one embodiment, a method for manufacturing a magnetic memory is disclosed. The method includes forming a magnetoresistive element on a substrate. The method further includes measuring an electrical characteristic of the magnetoresistive element, and applying a voltage to the magnetoresistive element which the electrical characteristic is measured.

What is claimed is: 
     
       1. A method for manufacturing a magnetic memory, the method comprising:
 forming a magnetoresistive element on a substrate; 
 measuring an electrical characteristic of the magnetoresistive element; 
 determining whether the electrical characteristic of the magnetoresistive element is defective or not; and 
 applying a voltage to the magnetoresistive element when the electrical characteristic is determined as being defective, and not applying a voltage to the magnetoresistive element when the electrical characteristic is determined as not defective. 
 
     
     
       2. The method according to  claim 1 , wherein the measuring the electrical characteristic of the magnetoresistive element is performed in a state in which the magnetoresistive element is on the substrate. 
     
     
       3. The method according to  claim 1 , wherein the applying the voltage to the magnetoresistive element is performed in a state in which the magnetoresistive element is on the substrate. 
     
     
       4. The method according to  claim 1 , further comprising measuring an electrical characteristic of the magnetoresistive element again, after the voltage is applied to the magnetoresistive element. 
     
     
       5. The method according to  claim 4 , further comprising packaging a chip including the magnetoresistive element to which the voltage is applied. 
     
     
       6. The method according to  claim 5 , further comprising measuring an electrical characteristic of the packaged chip by burn-in test. 
     
     
       7. The method according to  claim 6 , wherein the burn-in test includes applying a voltage which is greater than or equal to 0.3 V and less than or equal to 0.4 V. 
     
     
       8. The method according to  claim 7 , wherein an application time of the voltage which is greater than or equal to 0.3 V and less than or equal to 0.4 V is one hour or longer. 
     
     
       9. The method according to  claim 1 , wherein the measuring the electrical characteristic of the magnetoresistive element is performed to a chip that is cut out from the substrate. 
     
     
       10. The method according to  claim 9 , wherein the applying the voltage to the magnetoresistive element is performed to the chip. 
     
     
       11. The method according to  claim 10 , wherein the measuring the electrical characteristic of the chip is performed by burn-in test. 
     
     
       12. The method according to  claim 1 , wherein the applying the voltage to the magnetoresistive element is performed to a chip that is cut out from the substrate. 
     
     
       13. The method according to  claim 12 , wherein the measuring the electrical characteristic of the chip is performed by burn-in test. 
     
     
       14. The method according to  claim 1 , wherein the voltage is lower than a breakdown voltage of the magnetoresistive element. 
     
     
       15. The method according to  claim 1 , wherein the voltage is higher than a write voltage of the magnetoresistive element. 
     
     
       16. The method according to  claim 1 , wherein the voltage is greater than 0.5 V and less than 0.9 V. 
     
     
       17. The method according to  claim 1 , wherein an application time of the voltage is 10 nanoseconds or more. 
     
     
       18. The method according to  claim 1 , wherein the magnetoresistive element includes a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. 
     
     
       19. The method according to  claim 1 , wherein the applying the voltage to the magnetoresistive element comprises bringing the electrical characteristic determined as being defective into a normal electrical characteristic.