Inventor
JEONG JAEHUN
KR48 patents
⚠️ This page may combine multiple inventors who share the name “JEONG JAEHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS8767473B2Jul 1, 2014
Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby
SAMSUNG ELECTRONICS CO LTD64 citations98
US9330770B2May 3, 2016
Non-volatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD9 citations92
US11062784B2Jul 13, 2021
Non-volatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US9331095B2May 3, 2016
Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
SAMSUNG ELECTRONICS CO LTD11 citations84
US8964476B2Feb 24, 2015
Non-volatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US8923060B2Dec 30, 2014
Nonvolatile memory devices and operating methods thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US8824209B2Sep 2, 2014
Non-volatile memory device having vertical structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US8743614B2Jun 3, 2014
Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
SAMSUNG ELECTRONICS CO LTD7 citations84
US8637920B2Jan 28, 2014
Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics
SAMSUNG ELECTRONICS CO LTD8 citations84
US10474281B2Nov 12, 2019
Touch display driving integrated circuit, operation method of the same, and touch display device including the same
SAMSUNG ELECTRONICS CO LTD8 citations79
US10650903B2May 12, 2020
Non-volatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US11182001B2Nov 23, 2021
Touch display driving integrated circuit, operation method of the same, and touch display device including the same
SAMSUNG ELECTRONICS CO LTD2 citations68
US9202571B2Dec 1, 2015
Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
SAMSUNG ELECTRONICS CO LTD1 citations63
US12322457B2Jun 3, 2025
Nonvolatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11715537B2Aug 1, 2023
Non-volatile memory devices, operating methods thereof and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE46623EDec 5, 2017
Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby
SAMSUNG ELECTRONICS CO LTD0 citations52
US9219072B2Dec 22, 2015
Nonvolatile memory devices having a three dimensional structure utilizing strapping of a common source region and/or a well region
SAMSUNG ELECTRONICS CO LTD0 citations52
SHIM SUNIL
6 patentsUS8427878B2Apr 23, 2013
Non-volatile memory devices, operating methods thereof and memory systems including the same
SHIM SUNIL33 citations96
US8614917B2Dec 24, 2013
Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
SHIM SUNIL21 citations92
US8319275B2Nov 27, 2012
Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristics
SHIM SUNIL28 citations92
US8514625B2Aug 20, 2013
Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby
SHIM SUNIL11 citations84
US8115259B2Feb 14, 2012
Three-dimensional memory device
SHIM SUNIL7 citations84
US9012977B2Apr 21, 2015
Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics
SHIM SUNIL0 citations52
JEONG JAEHUN
5 patentsUS8519472B2Aug 27, 2013
Semiconductor device and method of forming the same
JEONG JAEHUN22 citations92
US8203211B2Jun 19, 2012
Nonvolatile memory devices having a three dimensional structure
JEONG JAEHUN22 citations92
US8896123B2Nov 25, 2014
Nonvolatile memory devices having a three dimensional structure
JEONG JAEHUN7 citations83
US8461639B2Jun 11, 2013
Nonvolatile memory device
JEONG JAEHUN5 citations72
US8507970B2Aug 13, 2013
Three-dimensional semiconductor memory device
JEONG JAEHUN3 citations62
LG INNOTEK CO LTD
3 patentsUS9812618B2Nov 7, 2017
Epoxy resin composition and light-emitting apparatus using the same
LG INNOTEK CO LTD0 citations49
US9257621B2Feb 9, 2016
Epoxy resin composition and light-emitting device package comprising the same
LG INNOTEK CO LTD0 citations48
US9000071B2Apr 7, 2015
Epoxy resin, epoxy resin compound comprising the same, and radiant heat circuit board using the compound
LG INNOTEK CO LTD0 citations45