Inventor · disambiguated record
Li-Ping Huang
Also filed as: HUANG LI · HUANG LI-PING
39 granted patents·21 pending applications·170 citations·filing 1998–2025
97Inventor score
Files withUNITED MICROELECTRONICS CORP17INVENT AND COLLABORATION LABORATORY PTE LTD12ETRON TECH INC6INVENT AND COLLABORATION LABORATORY INC5LU WEI-YUAN4
Top patents by PatentIndex Score
60 records- 0194US11475953B1Semiconductor layout pattern and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 18, 2022·4 cites·10 claims
- 0294US9698047B2Dummy gate technology to avoid shorting circuitUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 4, 2017·12 cites·12 claims
- 0393US8642417B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 4, 2014·14 cites·20 claims
- 0492US9871048B1Memory deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 16, 2018·13 cites·20 claims
- 0592US8324668B2Dummy structure for isolating devices in integrated circuitsHUANG LI-PING·Filed 2009·Granted Dec 4, 2012·31 cites·23 claims
- 0691US12340830B2Spin-orbit torque magnetic random access memory circuit and layout thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jun 24, 2025·1 cites·6 claims
- 0789US10153287B1Layout pattern for static random access memoryUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
- 0889US9786647B1Semiconductor layout structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 10, 2017·7 cites·9 claims
- 0988US11616128B2Transistor structure with reduced leakage current and adjustable on/off currentETRON TECH INC·Filed 2020·Granted Mar 28, 2023·2 cites·20 claims
- 1088US8754477B2Semiconductor device with multiple stress structures and method of forming the sameLU WEI-YUAN·Filed 2011·Granted Jun 17, 2014·10 cites·20 claims
- 1188US8348686B1Plug security structure for electrical connectorHUANG LI-PING·Filed 2011·Granted Jan 8, 2013·20 cites·6 claims
- 1284US11417369B2Semiconductor device structure with an underground interconnection embedded into a silicon substrateETRON TECH INC·Filed 2020·Granted Aug 16, 2022·1 cites·25 claims
- 1382US10026726B2Dummy gate technology to avoid shorting circuitUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 17, 2018·3 cites·5 claims
- 1482US8828817B2Semiconductor device and method of forming the sameLU WEI-YUAN·Filed 2012·Granted Sep 9, 2014·5 cites·20 claims
- 1581US10559573B2Static random access memory structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 11, 2020·5 cites·22 claims
- 1681US8482079B2Semiconductor device and method of manufacturing the sameCHENG CHUN-FAI·Filed 2011·Granted Jul 9, 2013·5 cites·20 claims
- 1781US8058134B2Junction profile engineering using staged thermal annealingWANG LI-TING·Filed 2009·Granted Nov 15, 2011·8 cites·26 claims
- 1878US9698054B2Strained structure of a p-type field effect transistorCHENG CHUN-FAI·Filed 2011·Granted Jul 4, 2017·3 cites·20 claims
- 1975US12148500B2Method forming a semiconductor device structure having an underground interconnection embedded into a silicon substrateETRON TECH INC·Filed 2022·Granted Nov 19, 2024·0 cites·8 claims
- 2075US2025095724A1Layout pattern of static random access memoryUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2175US2025040228A1Method for forming layout pattern of static random access memoryUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2274US2024105723A1Transistor structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 2373US12507432B2Transistor structure with reduced leakage current and adjustable on/off currentETRON TECH INC·Filed 2023·Granted Dec 23, 2025·0 cites·17 claims
- 2473US9178063B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·2 cites·20 claims
- 2573US2024105846A1Transistor structure and formation method thereofINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 2673US2024107746A1Memory device and manufacturing method thereofINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 2773US2025336761A1Semiconductor circuit structure with composite shallow trench isolation region for heat dissipation and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2025·Application pending·0 cites
- 2872US2025285670A1Spin-orbit torque magnetic random access memory circuit and layout thereofUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2970US12464782B2Transistor with controllable source/drain structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2022·Granted Nov 4, 2025·0 cites·21 claims
- 3070US10256242B2Memory circuit with thyristorETRON TECH INC·Filed 2017·Granted Apr 9, 2019·1 cites·17 claims
- 3170US8809918B2MOSFETs with multiple dislocation planesLU WEI-YUAN·Filed 2011·Granted Aug 19, 2014·2 cites·15 claims
- 3270US7741699B2Semiconductor device having ultra-shallow and highly activated source/drain extensionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 22, 2010·3 cites·11 claims
- 3369US11329159B2Strained structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 3469US2023027913A1Method for forming transistor structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2022·Application pending·0 cites
- 3567US12224001B2Layout pattern of static random access memory and the forming method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 11, 2025·0 cites·10 claims
- 3667US2025338493A1Semiconductor circuit structure with composite shallow trench isolation region for heat dissipation and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2025·Application pending·0 cites
- 3766US8143680B2Gated diode with non-planar source regionLIN DA-WEN·Filed 2010·Granted Mar 27, 2012·2 cites·16 claims
- 3864US12148809B2Layout pattern of static random access memoryUNITED MICROELECTRONICS CORP·Filed 2022·Granted Nov 19, 2024·0 cites·11 claims
- 3963US2025107242A1Semiconductor structure and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 4062US2025380483A1Transistor structure and method for forming the sameINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 4162US2025280556A1Method for forming mos transistor structureINVENT AND COLLABORATION LABORATORY INC·Filed 2024·Application pending·0 cites
- 4258US10727340B2Strained structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·0 cites·20 claims
- 4356US11915755B2Layout of semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Feb 27, 2024·0 cites·16 claims
- 4456US2024014319A1Semiconductor structure and transistor structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 4555US2023397411A1Planar complementary mosfet structure to reduce leakages and planar areasINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2023·Application pending·0 cites
- 4653US2023170421A1Transistor structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2022·Application pending·0 cites
- 4753US2023074402A1Standard cell structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2022·Application pending·0 cites
- 4852US12501600B2SRAM cell structureINVENT AND COLLABORATION LABORATORY PTE LTD·Filed 2022·Granted Dec 16, 2025·0 cites·25 claims
- 4952US2023403837A1Static random access memory array patternUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 5051US11441986B1Disturbance and stability analysis method for hydrate reservoirs with difference buried depthsQINGDAO INST MARINE GEOLOGY·Filed 2022·Granted Sep 13, 2022·0 cites·6 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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