Inventor

LIN TUNG-I

TW18 patents

⚠️ This page may combine multiple inventors who share the name “LIN TUNG-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN TUNG-I

TAIWAN SEMICONDUCTOR MFG CO LTD

Deep trench isolation (DTI) structure with a tri-layer passivation layer

Transistor channel

Deep trench isolation structure and method of forming same

Transistor channel

Image sensor device and manufacturing method thereof

Deep trench isolation structure and method of forming same

Pixel isolation device and fabrication method

Semiconductor device with trench isolation

Semiconductor structure having a silicon active layer formed over a SiGe etch stop layer and an insulating layer with a through silicon via (TSV) passed therethrough

Method for manufacturing a semiconductor structure comprising a semiconductor device layer formed on a tem, porary substrate having a graded SiGe etch stop layer therebetween

Method of forming source/drain regions of transistors

Pixel isolation device and fabrication method

Semiconductor device with trench isolation

Transistor with performance boost by epitaxial layer

Performance boost by silicon epitaxy

Semiconductor wafer with low defect count and method for manufacturing thereof

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG

CMOS image sensor with epitaxial passivation layer