Inventor
HUANG CHIEN-CHAO
TW61 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHIEN-CHAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
33 patentsUS7238564B2Jul 3, 2007
Method of forming a shallow trench isolation structure
TAIWAN SEMICONDUCTOR MFG64 citations98
US7190036B2Mar 13, 2007
Transistor mobility improvement by adjusting stress in shallow trench isolation
TAIWAN SEMICONDUCTOR MFG68 citations98
US7183137B2Feb 27, 2007
Method for dicing semiconductor wafers
TAIWAN SEMICONDUCTOR MFG102 citations98
US6867433B2Mar 15, 2005
Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
TAIWAN SEMICONDUCTOR MFG321 citations98
US7268024B2Sep 11, 2007
Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
TAIWAN SEMICONDUCTOR MFG80 citations97
US6900502B2May 31, 2005
Strained channel on insulator device
TAIWAN SEMICONDUCTOR MFG120 citations97
US7022561B2Apr 4, 2006
CMOS device
TAIWAN SEMICONDUCTOR MFG84 citations95
US7504652B2Mar 17, 2009
Phase change random access memory
TAIWAN SEMICONDUCTOR MFG21 citations93
US6812116B2Nov 2, 2004
Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
TAIWAN SEMICONDUCTOR MFG22 citations93
US7135372B2Nov 14, 2006
Strained silicon device manufacturing method
TAIWAN SEMICONDUCTOR MFG18 citations92
US7053453B2May 30, 2006
Substrate contact and method of forming the same
TAIWAN SEMICONDUCTOR MFG34 citations92
US6924181B2Aug 2, 2005
Strained silicon layer semiconductor product employing strained insulator layer
TAIWAN SEMICONDUCTOR MFG38 citations92
US6878610B1Apr 12, 2005
Relaxed silicon germanium substrate with low defect density
TAIWAN SEMICONDUCTOR MFG29 citations92
US7164189B2Jan 16, 2007
Slim spacer device and manufacturing method
TAIWAN SEMICONDUCTOR MFG21 citations91
US8008157B2Aug 30, 2011
CMOS device with raised source and drain regions
TAIWAN SEMICONDUCTOR MFG8 citations84
US7545006B2Jun 9, 2009
CMOS devices with graded silicide regions
TAIWAN SEMICONDUCTOR MFG10 citations84
US7465620B2Dec 16, 2008
Transistor mobility improvement by adjusting stress in shallow trench isolation
TAIWAN SEMICONDUCTOR MFG13 citations84
US7357838B2Apr 15, 2008
Relaxed silicon germanium substrate with low defect density
TAIWAN SEMICONDUCTOR MFG13 citations84
US7342289B2Mar 11, 2008
Strained silicon MOS devices
TAIWAN SEMICONDUCTOR MFG13 citations84
US7119440B2Oct 10, 2006
Back end IC wiring with improved electro-migration resistance
TAIWAN SEMICONDUCTOR MFG11 citations84
US7029994B2Apr 18, 2006
Strained channel on insulator device
TAIWAN SEMICONDUCTOR MFG15 citations84
US7265425B2Sep 4, 2007
Semiconductor device employing an extension spacer and a method of forming the same
TAIWAN SEMICONDUCTOR MFG12 citations82
US6975006B2Dec 13, 2005
Semiconductor device with modified channel compressive stress
TAIWAN SEMICONDUCTOR MFG12 citations82
US7745904B2Jun 29, 2010
Shallow trench isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations74
US7547605B2Jun 16, 2009
Microelectronic device and a method for its manufacture
TAIWAN SEMICONDUCTOR MFG5 citations63
US7312136B2Dec 25, 2007
Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
TAIWAN SEMICONDUCTOR MFG2 citations63
US7202122B2Apr 10, 2007
Cobalt silicidation process for substrates with a silicon—germanium layer
TAIWAN SEMICONDUCTOR MFG6 citations63
US7638376B2Dec 29, 2009
Method for forming SOI device
TAIWAN SEMICONDUCTOR MFG3 citations62
US7602006B2Oct 13, 2009
Semiconductor flash device
TAIWAN SEMICONDUCTOR MFG5 citations60
US7462554B2Dec 9, 2008
Method for forming semiconductor device with modified channel compressive stress
TAIWAN SEMICONDUCTOR MFG3 citations60
US7871742B2Jan 18, 2011
Method for controlling phase angle of a mask by post-treatment
TAIWAN SEMICONDUCTOR MFG0 citations52
US7452805B2Nov 18, 2008
Aluminum based conductor for via fill and interconnect
TAIWAN SEMICONDUCTOR MFG0 citations52
US7444199B2Oct 28, 2008
Method for preparing mask and wafer data files
TAIWAN SEMICONDUCTOR MFG0 citations52
UNITED MICROELECTRONICS CORP
9 patentsUS6420791B1Jul 16, 2002
Alignment mark design
UNITED MICROELECTRONICS CORP111 citations97
US6051345AApr 18, 2000
Method of producing phase shifting mask
UNITED MICROELECTRONICS CORP81 citations96
US6187480B1Feb 13, 2001
Alternating phase-shifting mask
UNITED MICROELECTRONICS CORP28 citations93
US6254676B1Jul 3, 2001
Method for manufacturing metal oxide semiconductor transistor having raised source/drain
UNITED MICROELECTRONICS CORP28 citations92
US6316303B1Nov 13, 2001
Method of fabricating a MOS transistor having SEG silicon
UNITED MICROELECTRONICS CORP13 citations74
US5965303AOct 12, 1999
Method of fabricating a phase shift mask utilizing a defect repair machine
UNITED MICROELECTRONICS CORP10 citations74
US5932489AAug 3, 1999
Method for manufacturing phase-shifting mask
UNITED MICROELECTRONICS CORP10 citations74
US5853927ADec 29, 1998
Method of aligning a mask in photolithographic process
UNITED MICROELECTRONICS CORP12 citations74
US6255023B1Jul 3, 2001
Method of manufacturing binary phase shift mask
UNITED MICROELECTRONICS CORP11 citations73
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS11380762B2Jul 5, 2022
Semiconductor device having semiconductor alloy layer adjacent a gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10818754B2Oct 27, 2020
Semiconductor device with silicided source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10446646B2Oct 15, 2019
Cobalt silicidation process for substrates comprised with a silicon-germanium layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
HUANG CHIEN-CHAO
2 patentsTU CHIH-CHIANG
2 patentsLIANG CHUN SHENG
1 patentShowing the top 50 of 61 patents by PatentIndex Score.