Inventor

KANAI MASAHIRO

JP191 patents

⚠️ This page may combine multiple inventors who share the name “KANAI MASAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANAI MASAHIRO

CANON KK

Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same

Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method

Microwave plasma treating apparatus

Method for producing an electronic device having a multi-layer structure

Photovoltaic element and fabrication process thereof

Photovoltaic elements and process and apparatus for their formation

Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof

Film forming apparatus

Photoelectric conversion element having a surface member or a protection member and building material using the same

Method and apparatus for forming a deposited film using a microwave CVD process

Continuous forming method for functional deposited films and deposition apparatus

Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same

Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method

Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same

Method for forming a photoelectric deposited film

Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers

Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method

Microwave plasma chemical vapor deposition apparatus for continuously preparing semiconductor devices

Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith

Process for forming deposited film

Film deposition apparatus

Deposited film forming apparatus

Apparatus for continuously forming a large area deposited film by means of microwave plasma CVD process

Continuously film-forming apparatus provided with improved gas gate means

Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method

Apparatus for forming a deposited film

Method of continuously forming a large area functional deposited film by microwave PCVD

Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space

Device for forming deposited film

Device for forming a deposited film

Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean

Process for forming deposited film

Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation

Process for forming a deposited film from two mutually reactive active species

Functional ZnSe1-x Tex :H deposited film

Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film

Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film

Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %

Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material

SEIKO EPSON CORP

Signal voltage level conversion circuit and output buffer circuit

Ink cartridge for ink-jet printing apparatus

Non-volatile semiconductor memory device

Non-volatile semiconductor memory device

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Programming method for non-volatile semiconductor memory device

HALO LSI DESIGN & DEVICE TECH

Programming method for non-volatile semiconductor memory device