Inventor

OH SE-CHUNG

KR54 patents

⚠️ This page may combine multiple inventors who share the name “OH SE-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OH SE-CHUNG

SAMSUNG ELECTRONICS CO LTD

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

Resistive memory devices including selected reference memory cells

Resistive memory devices including selected reference memory cells

Magnetic tunnel junction and memory device including the same

Resistive memory devices including selected reference memory cells operating responsive to read operations

Resistive memory devices including selected reference memory cells operating responsive to read operations

Method of manufacturing semiconductor device having transition metal oxide layer and related device

Method of writing to MRAM devices

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Magnetoresistive random access memory devices and methods of manufacturing the same

Resistive memory devices and methods of forming resistive memory devices

Magnetic random access memory device and method of forming the same

Magnetic memory devices

Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same

Magnetic memory device

Magnetic memory device

Magnetic memory device and method of fabricating the same

Data storage devices including a first top electrode and a different second top electrode thereon

Data storage devices including a first top electrode and a different second top electrode thereon

Magnetic memory devices

Variable resistance memory device

Method of manufacturing a variable resistance memory device

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

Magnetic random access memory device and method of forming the same

Magnetic memory device and method for fabricating the same

Sputtering apparatus and method for fabricating semiconductor device using the same

Variable resistance memory device

Sputtering apparatus and method for fabricating semiconductor device using the same

Substrate processing apparatus

Process control method and process control system for manufacturing semiconductor device

Magnetoresistive random access memory devices and methods of manufacturing the same

Magnetic device

Method of fabricating memory device

Magnetic memory device and method of fabricating the same

Magnetic memory device and method of fabricating the same

Semiconductor device having pinned layer with enhanced thermal endurance

Nonvolatile memory devices and methods of forming the same

PARK JEONG HEON

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

KIM KI-WOONG

Magnetic device

BAEK IN-GYU

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

LEE JANG-EUN

Method for forming minute pattern and method for forming semiconductor memory device using the same

SHIN HEE-JU

Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

JEONG JUN-HO

Method of fabricating semiconductor device

YIM EUN-KYUNG

Nonvolatile memory devices and methods of forming the same

OH HYUNG-ROK

Stacked MRAM device and memory system having the same

APALKOV DMYTRO

Method and system for setting a pinned layer in a magnetic tunneling junction

PARK JEONG-HEON

Semiconductor device having pinned layer with enhanced thermal endurance

LEE JOON MYOUNG

Substrate processing apparatus and method for manufacturing semiconductor device using the same