Inventor

NG DANIEL

MY68 patents

⚠️ This page may combine multiple inventors who share the name “NG DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NG DANIEL

ALPHA & OMEGA SEMICONDUCTOR

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Approach to integrate Schottky in MOSFET

Integration of a sense FET into a discrete power MOSFET

Nano-tube MOSFET technology and devices

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Shielded gate trench MOSFET package

Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching

Integrating schottky diode into power MOSFET

Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device

Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection

Power MOSFET device structure for high frequency applications

Calibration technique for measuring gate resistance of power MOS gate device at water level

Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Integrating Schottky diode into power MOSFET

Method of making a low-Rdson vertical power MOSFET device

Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts

THULE IND AB

Lockable quick release mechanism

Apparatus for pairwise transport of elongate objects

Snowboard carrier for attachment to a vehicle roof rack

YILMAZ HAMZA

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts

Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts

LUI SIK

Approach to integrate Schottky in MOSFET

Shielded gate trench MOSFET package

Two-dimensional shielded gate transistor device and method of manufacture

BHALLA ANUP

Power MOSFET device structure for high frequency applications

Calibration technique for measuring gate resistance of power MOS gate device at wafer level

Power MOSFET device structure for high frequency applications

PAN JI

Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching

Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application

Integrated snubber in a single poly MOSFET

SU YI

Integrating Schottky diode into power MOSFET

Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection

Method of making a low-Rdson vertical power MOSFET device

SPECTRIAN

MOSFET having buried shield plate for reduced gate/drain capacitance

RF power device having voltage controlled linearity

SILICONIX INC

High density trench DMOS transistor with trench bottom implant

SPECTRIAN CORP

MOSFET having buried shield plate for reduced gate/drain capacitance

BOBDE MADHUR

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

IND AR THULE

Lockable quick release mechanism

(unassigned)

Method and apparatus for emissivity independent self-calibrating of a multiwavelength pyrometer

KERR CORP

Single dose dental adhesive delivery system and method and adhesive therefor

ALPHA & OMEGA SEMICONDUCTORS L

Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout

WANG XIAOBIN

Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method

PANG JI

Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application