P

Inventor

CHEN LING

US276 patents
⚠️ This page may combine multiple inventors who share the name “CHEN LING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

37 patents
US7591907B2Sep 22, 2009

Apparatus for hybrid chemical processing

APPLIED MATERIALS INC375 citations99
US7204886B2Apr 17, 2007

Apparatus and method for hybrid chemical processing

APPLIED MATERIALS INC525 citations99
US7186385B2Mar 6, 2007

Apparatus for providing gas to a processing chamber

APPLIED MATERIALS INC128 citations99
US7081271B2Jul 25, 2006

Cyclical deposition of refractory metal silicon nitride

APPLIED MATERIALS INC124 citations99
US6916398B2Jul 12, 2005

Gas delivery apparatus and method for atomic layer deposition

APPLIED MATERIALS INC646 citations99
US6905541B2Jun 14, 2005

Method and apparatus of generating PDMAT precursor

APPLIED MATERIALS INC119 citations99
US6838125B2Jan 4, 2005

Method of film deposition using activated precursor gases

APPLIED MATERIALS INC197 citations99
US6784096B2Aug 31, 2004

Methods and apparatus for forming barrier layers in high aspect ratio vias

APPLIED MATERIALS INC137 citations99
US6660622B2Dec 9, 2003

Process for removing an underlying layer and depositing a barrier layer in one reactor

APPLIED MATERIALS INC120 citations99
US6607976B2Aug 19, 2003

Copper interconnect barrier layer structure and formation method

APPLIED MATERIALS INC289 citations99
US6498091B1Dec 24, 2002

Method of using a barrier sputter reactor to remove an underlying barrier layer

APPLIED MATERIALS INC626 citations99
US6171661B1Jan 9, 2001

Deposition of copper with increased adhesion

APPLIED MATERIALS INC362 citations99
US6110530AAug 29, 2000

CVD method of depositing copper films by using improved organocopper precursor blend

APPLIED MATERIALS INC272 citations99
US7780785B2Aug 24, 2010

Gas delivery apparatus for atomic layer deposition

APPLIED MATERIALS INC61 citations98
US7404985B2Jul 29, 2008

Noble metal layer formation for copper film deposition

APPLIED MATERIALS INC60 citations98
US7402210B2Jul 22, 2008

Apparatus and method for hybrid chemical processing

APPLIED MATERIALS INC61 citations98
US7228873B2Jun 12, 2007

Valve design and configuration for fast delivery system

APPLIED MATERIALS INC61 citations98
US6953742B2Oct 11, 2005

Tantalum barrier layer for copper metallization

APPLIED MATERIALS INC79 citations98
US6772072B2Aug 3, 2004

Method and apparatus for monitoring solid precursor delivery

APPLIED MATERIALS INC127 citations98
US6562715B1May 13, 2003

Barrier layer structure for copper metallization and method of forming the structure

APPLIED MATERIALS INC112 citations98
US6309713B1Oct 30, 2001

Deposition of tungsten nitride by plasma enhanced chemical vapor deposition

APPLIED MATERIALS INC89 citations98
US6050506AApr 18, 2000

Pattern of apertures in a showerhead for chemical vapor deposition

APPLIED MATERIALS INC708 citations98
US6402806B1Jun 11, 2002

Method for unreacted precursor conversion and effluent removal

APPLIED MATERIALS INC436 citations97
US6099649AAug 8, 2000

Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal

APPLIED MATERIALS INC480 citations97
US5989999ANov 23, 1999

Construction of a tantalum nitride film on a semiconductor wafer

APPLIED MATERIALS INC100 citations97
US7429361B2Sep 30, 2008

Method and apparatus for providing precursor gas to a processing chamber

APPLIED MATERIALS INC23 citations96
US7270709B2Sep 18, 2007

Method and apparatus of generating PDMAT precursor

APPLIED MATERIALS INC50 citations96
US7066194B2Jun 27, 2006

Valve design and configuration for fast delivery system

APPLIED MATERIALS INC61 citations96
US7026238B2Apr 11, 2006

Reliability barrier integration for Cu application

APPLIED MATERIALS INC99 citations96
US6974771B2Dec 13, 2005

Methods and apparatus for forming barrier layers in high aspect ratio vias

APPLIED MATERIALS INC46 citations96
US6972267B2Dec 6, 2005

Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor

APPLIED MATERIALS INC63 citations96
US6939801B2Sep 6, 2005

Selective deposition of a barrier layer on a dielectric material

APPLIED MATERIALS INC56 citations96
US6936906B2Aug 30, 2005

Integration of barrier layer and seed layer

APPLIED MATERIALS INC56 citations96
US6620956B2Sep 16, 2003

Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing

APPLIED MATERIALS INC69 citations96
US6596643B2Jul 22, 2003

CVD TiSiN barrier for copper integration

APPLIED MATERIALS INC60 citations96
US6955211B2Oct 18, 2005

Method and apparatus for gas temperature control in a semiconductor processing system

APPLIED MATERIALS INC70 citations95
US6596085B1Jul 22, 2003

Methods and apparatus for improved vaporization of deposition material in a substrate processing system

APPLIED MATERIALS INC71 citations95

TAIWAN SEMICONDUCTOR MFG

5 patents

DONGGUAN YIHE SILICONE & RUBBER TECH CO LTD

5 patents

MACRONIX INT CO LTD

2 patents

IBM

1 patent

Showing the top 50 of 276 patents by PatentIndex Score.