Inventor
CHANG FENG-MING
TW83 patents
⚠️ This page may combine multiple inventors who share the name “CHANG FENG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
35 patentsUS10050045B1Aug 14, 2018
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US9620509B1Apr 11, 2017
Static random access memory device with vertical FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94
US11205474B1Dec 21, 2021
SRAM design with four-poly-pitch
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11527539B2Dec 13, 2022
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US12046276B2Jul 23, 2024
SRAM design with four-poly-pitch
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11657869B2May 23, 2023
SRAM design with four-poly-pitch
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11444197B2Sep 13, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522553B2Dec 31, 2019
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9431066B1Aug 30, 2016
Circuit having a non-symmetrical layout
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US11552084B2Jan 10, 2023
Shared bit lines for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10840251B2Nov 17, 2020
Memory device and manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12588182B2Mar 24, 2026
Multi-port SRAM cell with metal interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12367924B2Jul 22, 2025
SRAM design with four-poly-pitch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11961769B2Apr 16, 2024
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11678474B2Jun 13, 2023
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11495503B2Nov 8, 2022
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11062963B2Jul 13, 2021
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12588180B2Mar 24, 2026
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12532446B2Jan 20, 2026
Fin-based well straps for improving memory macro performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12495571B2Dec 9, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12367925B2Jul 22, 2025
Static random access memory layout
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349330B2Jul 1, 2025
Shared pick-up regions for memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190943B2Jan 7, 2025
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12048135B2Jul 23, 2024
Four-poly-pitch SRAM cell with backside metal tracks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009428B2Jun 11, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984400B2May 14, 2024
Method of fabricating a semiconductor device including multiple contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942145B2Mar 26, 2024
Static random access memory layout
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11943908B2Mar 26, 2024
Method, structures and devices for intra-connection structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11937415B2Mar 19, 2024
Fin-based well straps for improving memory macro performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11690209B2Jun 27, 2023
Fin-based well straps for improving memory macro performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682451B2Jun 20, 2023
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11675949B2Jun 13, 2023
Space optimization between SRAM cells and standard cells
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11211116B2Dec 28, 2021
Embedded SRAM write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201158B2Dec 14, 2021
SRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114153B2Sep 7, 2021
SRAM devices with reduced coupling capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8004042B2Aug 23, 2011
Static random access memory (SRAM) cell and method for forming same
TAIWAN SEMICONDUCTOR MFG183 citations98
US8766376B2Jul 1, 2014
Static random access memory (SRAM) cell and method for forming same
TAIWAN SEMICONDUCTOR MFG4 citations72
US8947900B2Feb 3, 2015
Stable SRAM cell
TAIWAN SEMICONDUCTOR MFG2 citations63
US8908409B2Dec 9, 2014
Stable SRAM cell
TAIWAN SEMICONDUCTOR MFG2 citations63
US8743579B2Jun 3, 2014
Stable SRAM cell
TAIWAN SEMICONDUCTOR MFG3 citations63
US7904844B2Mar 8, 2011
System, method, and computer program product for matching cell layout of an integrated circuit design
TAIWAN SEMICONDUCTOR MFG6 citations63
US7788612B2Aug 31, 2010
System, method, and computer program product for matching cell layout of an integrated circuit design
TAIWAN SEMICONDUCTOR MFG2 citations63
US7613054B2Nov 3, 2009
SRAM device with enhanced read/write operations
TAIWAN SEMICONDUCTOR MFG5 citations63
CHANG FENG-MING
2 patentsHUANG HUAI-YING
1 patentTAIWAN SEMIOCONDUCTOR MFG CO L
1 patentYANG LIE-YONG
1 patentLEE YAO-TSUNG
1 patentTSAO HENG-KWONG
1 patentShowing the top 50 of 83 patents by PatentIndex Score.