P

Inventor

LIU AN-CHI

TW44 patents
⚠️ This page may combine multiple inventors who share the name “LIU AN-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

27 patents
US9899522B1Feb 20, 2018

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP29 citations94
US10109531B1Oct 23, 2018

Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereof

UNITED MICROELECTRONICS CORP31 citations92
US9530868B2Dec 27, 2016

Fin structure and method of forming the same

UNITED MICROELECTRONICS CORP20 citations92
US10147795B1Dec 4, 2018

Tunneling field effect transistor and method of fabricating the same

UNITED MICROELECTRONICS CORP5 citations84
US9054187B2Jun 9, 2015

Semiconductor structure

UNITED MICROELECTRONICS CORP8 citations84
US10283415B2May 7, 2019

Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereof

UNITED MICROELECTRONICS CORP8 citations82
US11322600B2May 3, 2022

High electron mobility transistor

UNITED MICROELECTRONICS CORP3 citations73
US10991875B2Apr 27, 2021

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP3 citations73
US10062584B1Aug 28, 2018

Method for forming semiconductor structure

UNITED MICROELECTRONICS CORP3 citations73
US10276443B2Apr 30, 2019

Insulating layer next to fin structure and method of removing fin structure

UNITED MICROELECTRONICS CORP2 citations71
US7691754B2Apr 6, 2010

Method for removing photoresist layer and method of forming opening

UNITED MICROELECTRONICS CORP2 citations63
US12262645B2Mar 25, 2025

Magnetoresistive random access memory with metal oxide layer on top surface and sidewall of MTJ

UNITED MICROELECTRONICS CORP0 citations62
US12080778B2Sep 3, 2024

High electron mobility transistor

UNITED MICROELECTRONICS CORP0 citations62
US11784238B2Oct 10, 2023

High electron mobility transistor

UNITED MICROELECTRONICS CORP0 citations62
US11758824B2Sep 12, 2023

Magnetoresistive random access memory with protrusions on sides of metal interconnection

UNITED MICROELECTRONICS CORP0 citations62
US10886395B2Jan 5, 2021

Method for fabricating tunneling field effect transistor having interfacial layer containing nitrogen

UNITED MICROELECTRONICS CORP0 citations62
US10475892B2Nov 12, 2019

Tunneling field effect transistor and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations52
US10468517B2Nov 5, 2019

Tunneling field effect transistor having interfacial layer containing nitrogen

UNITED MICROELECTRONICS CORP0 citations52
US10069009B2Sep 4, 2018

Method for forming recess within epitaxial layer

UNITED MICROELECTRONICS CORP0 citations52
US9384985B2Jul 5, 2016

Semiconductor structure including silicon and oxygen-containing metal layer and process thereof

UNITED MICROELECTRONICS CORP1 citations52
US9105720B2Aug 11, 2015

Semiconductor device having metal gate and manufacturing method thereof

UNITED MICROELECTRONICS CORP0 citations52
US9530646B2Dec 27, 2016

Method of forming a semiconductor structure

UNITED MICROELECTRONICS CORP0 citations51
US7670438B2Mar 2, 2010

Method of removing particles from wafer

UNITED MICROELECTRONICS CORP0 citations49
US8877640B2Nov 4, 2014

Cleaning solution and damascene process using the same

UNITED MICROELECTRONICS CORP1 citations48
US8350334B2Jan 8, 2013

Stress film forming method and stress film structure

UNITED MICROELECTRONICS CORP0 citations48
US7884026B2Feb 8, 2011

Method of fabricating dual damascene structure

UNITED MICROELECTRONICS CORP0 citations42
US10211107B1Feb 19, 2019

Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean step

UNITED MICROELECTRONICS CORP0 citations40

LIU AN-CHI

8 patents

FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD

6 patents

E INK HOLDINGS INC

2 patents

(unassigned)

1 patent