Inventor
FURUKAWA KATSUKI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “FURUKAWA KATSUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHARP KK
29 patentsUS5170231ADec 8, 1992
Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current
SHARP KK134 citations98
US5693180ADec 2, 1997
Dry etching method for a gallium nitride type compound semiconductor
SHARP KK58 citations96
US5433167AJul 18, 1995
Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
SHARP KK59 citations96
US5387804AFeb 7, 1995
Light emitting diode
SHARP KK98 citations96
US5243204ASep 7, 1993
Silicon carbide light emitting diode and a method for the same
SHARP KK76 citations96
US5184199AFeb 2, 1993
Silicon carbide semiconductor device
SHARP KK104 citations96
US5124779AJun 23, 1992
Silicon carbide semiconductor device with ohmic electrode consisting of alloy
SHARP KK53 citations96
US4762806AAug 9, 1988
Process for producing a SiC semiconductor device
SHARP KK110 citations96
US4990994AFeb 5, 1991
Electrode structure for silicon carbide semiconductors
SHARP KK61 citations95
US4897710AJan 30, 1990
Semiconductor device
SHARP KK80 citations95
US5037502AAug 6, 1991
Process for producing a single-crystal substrate of silicon carbide
SHARP KK29 citations93
US4966860AOct 30, 1990
Process for producing a SiC semiconductor device
SHARP KK23 citations93
US5804839ASep 8, 1998
III-V nitride compound semiconductor device and method for fabricating the same
SHARP KK37 citations92
US5329141AJul 12, 1994
Light emitting diode
SHARP KK24 citations92
US5279701AJan 18, 1994
Method for the growth of silicon carbide single crystals
SHARP KK35 citations92
US5230768AJul 27, 1993
Method for the production of SiC single crystals by using a specific substrate crystal orientation
SHARP KK41 citations92
US5229625AJul 20, 1993
Schottky barrier gate type field effect transistor
SHARP KK50 citations92
US5216264AJun 1, 1993
Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
SHARP KK25 citations92
US5135885AAug 4, 1992
Method of manufacturing silicon carbide fets
SHARP KK38 citations92
US5063421ANov 5, 1991
Silicon carbide light emitting diode having a pn junction
SHARP KK34 citations92
US5030580AJul 9, 1991
Method for producing a silicon carbide semiconductor device
SHARP KK36 citations92
US4897149AJan 30, 1990
Method of fabricating single-crystal substrates of silicon carbide
SHARP KK34 citations92
US5319220AJun 7, 1994
Silicon carbide semiconductor device
SHARP KK40 citations91
US5049950ASep 17, 1991
MIS structure photosensor
SHARP KK23 citations91
US6888867B2May 3, 2005
Semiconductor laser device and fabrication method thereof
SHARP KK14 citations83
US4865659ASep 12, 1989
Heteroepitaxial growth of SiC on Si
SHARP KK23 citations82
US4623425ANov 18, 1986
Method of fabricating single-crystal substrates of silicon carbide
SHARP KK23 citations81
US5288365AFeb 22, 1994
Method for growing a silicon carbide single crystal
SHARP KK14 citations74
US5272107ADec 21, 1993
Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device
SHARP KK14 citations74