P

Inventor

SANO MASAFUMI

JP112 patents
⚠️ This page may combine multiple inventors who share the name “SANO MASAFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

39 patents
US9130049B2Sep 8, 2015

Amorphous oxide and field effect transistor

CANON KK92 citations99
US7868326B2Jan 11, 2011

Field effect transistor

CANON KK135 citations99
US7855379B2Dec 21, 2010

Electron device using oxide semiconductor and method of manufacturing the same

CANON KK136 citations99
US7601984B2Oct 13, 2009

Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator

CANON KK1,053 citations99
US6613603B1Sep 2, 2003

Photovoltaic device, process for production thereof, and zinc oxide thin film

CANON KK216 citations99
US6399873B1Jun 4, 2002

Stacked photovoltaic device

CANON KK103 citations99
US6123824ASep 26, 2000

Process for producing photo-electricity generating device

CANON KK197 citations99
US5769950AJun 23, 1998

Device for forming deposited film

CANON KK236 citations99
US5397395AMar 14, 1995

Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same

CANON KK434 citations99
US9583637B2Feb 28, 2017

Amorphous oxide and field effect transistor

CANON KK59 citations98
US7923723B2Apr 12, 2011

Thin-film transistor and display device using oxide semiconductor

CANON KK105 citations98
US7829444B2Nov 9, 2010

Field effect transistor manufacturing method

CANON KK140 citations98
US6180870B1Jan 30, 2001

Photovoltaic device

CANON KK111 citations98
US5248621ASep 28, 1993

Method for producing solar cell devices of crystalline material

CANON KK133 citations98
US7064263B2Jun 20, 2006

Stacked photovoltaic device

CANON KK58 citations96
US6858308B2Feb 22, 2005

Semiconductor element, and method of forming silicon-based film

CANON KK54 citations96
US6835888B2Dec 28, 2004

Stacked photovoltaic device

CANON KK47 citations96
US6346184B1Feb 12, 2002

Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device

CANON KK44 citations96
US6344608B2Feb 5, 2002

Photovoltaic element

CANON KK52 citations96
US6172296B1Jan 9, 2001

Photovoltaic cell

CANON KK63 citations96
US5266116ANov 30, 1993

Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers

CANON KK59 citations96
US5261961ANov 16, 1993

Device for forming deposited film

CANON KK57 citations96
US5527396AJun 18, 1996

Deposited film forming apparatus

CANON KK46 citations95
US5417770AMay 23, 1995

Photovoltaic device and a forming method thereof

CANON KK61 citations95
US10615287B2Apr 7, 2020

Amorphous oxide and field effect transistor

CANON KK12 citations94
US7851792B2Dec 14, 2010

Field-effect transistor

CANON KK47 citations94
US7001460B2Feb 21, 2006

Semiconductor element and its manufacturing method

CANON KK13 citations93
US6855621B2Feb 15, 2005

Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element

CANON KK48 citations93
US6635899B2Oct 21, 2003

Semiconductor element having microcrystalline grains and manufacturing method thereof

CANON KK26 citations93
US6379994B1Apr 30, 2002

Method for manufacturing photovoltaic element

CANON KK29 citations93
US6303945B1Oct 16, 2001

Semiconductor element having microcrystalline semiconductor material

CANON KK24 citations93
US6268233B1Jul 31, 2001

Photovoltaic device

CANON KK39 citations93
US6211454B1Apr 3, 2001

Photovoltaic element

CANON KK21 citations93
US5824566AOct 20, 1998

Method of producing a photovoltaic device

CANON KK52 citations93
US5635408AJun 3, 1997

Method of producing a semiconductor device

CANON KK44 citations93
US5523126AJun 4, 1996

Method of continuously forming a large area functional deposited film by microwave PCVD

CANON KK39 citations93
US5324364AJun 28, 1994

Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content

CANON KK39 citations93
US5126169AJun 30, 1992

Process for forming a deposited film from two mutually reactive active species

CANON KK23 citations93
US4942058AJul 17, 1990

Process for forming deposited film

CANON KK25 citations93

SANO MASAFUMI

4 patents

OFUJI MASATO

2 patents

HAYASHI RYO

1 patent

ITAGAKI NAHO

1 patent

SATO AYUMU

1 patent

FANUC LTD

1 patent

EPISTAR CORP

1 patent

Showing the top 50 of 112 patents by PatentIndex Score.