Inventor
QUADER KHANDKER N
US32 patents
⚠️ This page may combine multiple inventors who share the name “QUADER KHANDKER N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
21 patentsUS6870768B2Mar 22, 2005
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP201 citations99
US6807095B2Oct 19, 2004
Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements
SANDISK CORP323 citations99
US6781877B2Aug 24, 2004
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP520 citations99
US6717851B2Apr 6, 2004
Method of reducing disturbs in non-volatile memory
SANDISK CORP128 citations99
US6522580B2Feb 18, 2003
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
SANDISK CORP1,400 citations99
US6967872B2Nov 22, 2005
Method and system for programming and inhibiting multi-level, non-volatile memory cells
SANDISK CORP67 citations97
US7095654B2Aug 22, 2006
Method and system for programming and inhibiting multi-level, non-volatile memory cells
SANDISK CORP44 citations95
US6990018B2Jan 24, 2006
Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
SANDISK CORP46 citations95
US7046548B2May 16, 2006
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP18 citations93
US6977844B2Dec 20, 2005
Method of reducing disturbs in non-volatile memory
SANDISK CORP23 citations93
US6958936B2Oct 25, 2005
Erase inhibit in non-volatile memories
SANDISK CORP22 citations93
US6888752B2May 3, 2005
Method of reducing disturbs in non-volatile memory
SANDISK CORP16 citations93
US6696880B2Feb 24, 2004
High voltage switch suitable for non-volatile memories
SANDISK CORP29 citations93
US6282130B1Aug 28, 2001
EEPROM memory chip with multiple use pinouts
SANDISK CORP20 citations93
US6944068B2Sep 13, 2005
Method and system for programming and inhibiting multi-level, non-volatile memory cells
SANDISK CORP25 citations92
US7420846B2Sep 2, 2008
Read and erase verify methods and circuits suitable for low voltage non-volatile memories
SANDISK CORP6 citations74
US6396757B1May 28, 2002
Multiple output current mirror with improved accuracy
SANDISK CORP11 citations69
US7145804B2Dec 5, 2006
Method of reducing disturbs in non-volatile memory
SANDISK CORP1 citations63
US6285615B1Sep 4, 2001
Multiple output current mirror with improved accuracy
SANDISK CORP3 citations58
US7468915B2Dec 23, 2008
Method of reducing disturbs in non-volatile memory
SANDISK CORP0 citations52
US7379346B2May 27, 2008
Erase inhibit in non-volatile memories
SANDISK CORP1 citations52
TOSHIBA KK
6 patentsUS7224613B2May 29, 2007
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK95 citations99
US7061798B2Jun 13, 2006
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK63 citations98
US7376010B2May 20, 2008
Nonvolatile semiconductor memory device having protection function for each memory block
TOSHIBA KK11 citations84
US7394704B2Jul 1, 2008
Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
TOSHIBA KK7 citations73
US7952925B2May 31, 2011
Nonvolatile semiconductor memory device having protection function for each memory block
TOSHIBA KK0 citations52
US7787296B2Aug 31, 2010
Nonvolatile semiconductor memory device having protection function for each memory block
TOSHIBA KK0 citations52