Inventor
CHAN LAP
US150 patents
⚠️ This page may combine multiple inventors who share the name “CHAN LAP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
47 patentsUS6303418B1Oct 16, 2001
Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
CHARTERED SEMICONDUCTOR MFG374 citations99
US6300177B1Oct 9, 2001
Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials
CHARTERED SEMICONDUCTOR MFG175 citations99
US6261935B1Jul 17, 2001
Method of forming contact to polysilicon gate for MOS devices
CHARTERED SEMICONDUCTOR MFG216 citations99
US5870121AFeb 9, 1999
Ti/titanium nitride and ti/tungsten nitride thin film resistors for thermal ink jet technology
CHARTERED SEMICONDUCTOR MFG140 citations99
US5744376AApr 28, 1998
Method of manufacturing copper interconnect with top barrier layer
CHARTERED SEMICONDUCTOR MFG135 citations99
US5731239AMar 24, 1998
Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
CHARTERED SEMICONDUCTOR MFG174 citations99
US5710070AJan 20, 1998
Application of titanium nitride and tungsten nitride thin film resistor for thermal ink jet technology
CHARTERED SEMICONDUCTOR MFG146 citations99
US6461900B1Oct 8, 2002
Method to form a self-aligned CMOS inverter using vertical device integration
CHARTERED SEMICONDUCTOR MFG141 citations98
US6313008B1Nov 6, 2001
Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon
CHARTERED SEMICONDUCTOR MFG90 citations98
US6252290B1Jun 26, 2001
Method to form, and structure of, a dual damascene interconnect device
CHARTERED SEMICONDUCTOR MFG123 citations98
US6136693AOct 24, 2000
Method for planarized interconnect vias using electroless plating and CMP
CHARTERED SEMICONDUCTOR MFG289 citations98
US6747314B2Jun 8, 2004
Method to form a self-aligned CMOS inverter using vertical device integration
CHARTERED SEMICONDUCTOR MFG93 citations97
US6348385B1Feb 19, 2002
Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant
CHARTERED SEMICONDUCTOR MFG128 citations97
US6406945B1Jun 18, 2002
Method for forming a transistor gate dielectric with high-K and low-K regions
CHARTERED SEMICONDUCTOR MFG59 citations96
US6403485B1Jun 11, 2002
Method to form a low parasitic capacitance pseudo-SOI CMOS device
CHARTERED SEMICONDUCTOR MFG66 citations96
US6140237AOct 31, 2000
Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
CHARTERED SEMICONDUCTOR MFG68 citations96
US6121130ASep 19, 2000
Laser curing of spin-on dielectric thin films
CHARTERED SEMICONDUCTOR MFG118 citations96
US6110787AAug 29, 2000
Method for fabricating a MOS device
CHARTERED SEMICONDUCTOR MFG99 citations96
US5856225AJan 5, 1999
Creation of a self-aligned, ion implanted channel region, after source and drain formation
CHARTERED SEMICONDUCTOR MFG253 citations96
US5728621AMar 17, 1998
Method for shallow trench isolation
CHARTERED SEMICONDUCTOR MFG171 citations96
US6252277B1Jun 26, 2001
Embedded polysilicon gate MOSFET
CHARTERED SEMICONDUCTOR MFG137 citations95
US6221727B1Apr 24, 2001
Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology
CHARTERED SEMICONDUCTOR MFG66 citations95
US6214728B1Apr 10, 2001
Method to encapsulate copper plug for interconnect metallization
CHARTERED SEMICONDUCTOR MFG52 citations95
US6001706ADec 14, 1999
Method for making improved shallow trench isolation for semiconductor integrated circuits
CHARTERED SEMICONDUCTOR MFG103 citations95
US5705849AJan 6, 1998
Antifuse structure and method for manufacturing it
CHARTERED SEMICONDUCTOR MFG55 citations95
US5610083AMar 11, 1997
Method of making back gate contact for silicon on insulator technology
CHARTERED SEMICONDUCTOR MFG98 citations95
US6468906B1Oct 22, 2002
Passivation of copper interconnect surfaces with a passivating metal layer
CHARTERED SEMICONDUCTOR MFG67 citations94
US6716693B1Apr 6, 2004
Method of forming a surface coating layer within an opening within a body by atomic layer deposition
CHARTERED SEMICONDUCTOR MFG49 citations93
US6709934B2Mar 23, 2004
Method for forming variable-K gate dielectric
CHARTERED SEMICONDUCTOR MFG26 citations93
US6656792B2Dec 2, 2003
Nanocrystal flash memory device and manufacturing method therefor
CHARTERED SEMICONDUCTOR MFG106 citations93
US6511884B1Jan 28, 2003
Method to form and/or isolate vertical transistors
CHARTERED SEMICONDUCTOR MFG48 citations93
US6468877B1Oct 22, 2002
Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner
CHARTERED SEMICONDUCTOR MFG53 citations93
US6455377B1Sep 24, 2002
Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
CHARTERED SEMICONDUCTOR MFG21 citations93
US6436770B1Aug 20, 2002
Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation
CHARTERED SEMICONDUCTOR MFG45 citations93
US6417056B1Jul 9, 2002
Method to form low-overlap-capacitance transistors by forming microtrench at the gate edge
CHARTERED SEMICONDUCTOR MFG51 citations93
US6306715B1Oct 23, 2001
Method to form smaller channel with CMOS device by isotropic etching of the gate materials
CHARTERED SEMICONDUCTOR MFG46 citations93
US6275089B1Aug 14, 2001
Low voltage controllable transient trigger network for ESD protection
CHARTERED SEMICONDUCTOR MFG45 citations93
US6188135B1Feb 13, 2001
Copper interconnect with top barrier layer
CHARTERED SEMICONDUCTOR MFG22 citations93
US6177324B1Jan 23, 2001
ESD protection device for STI deep submicron technology
CHARTERED SEMICONDUCTOR MFG42 citations93
US5948700ASep 7, 1999
Method of planarization of an intermetal dielectric layer using chemical mechanical polishing
CHARTERED SEMICONDUCTOR MFG33 citations93
US5900672AMay 4, 1999
Barrier layer
CHARTERED SEMICONDUCTOR MFG21 citations93
US6903013B2Jun 7, 2005
Method to fill a trench and tunnel by using ALD seed layer and electroless plating
CHARTERED SEMICONDUCTOR MFG44 citations92
US6730571B1May 4, 2004
Method to form a cross network of air gaps within IMD layer
CHARTERED SEMICONDUCTOR MFG23 citations92
US6696761B2Feb 24, 2004
Method to encapsulate copper plug for interconnect metallization
CHARTERED SEMICONDUCTOR MFG17 citations92
US6638844B1Oct 28, 2003
Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill
CHARTERED SEMICONDUCTOR MFG29 citations92
US6501122B1Dec 31, 2002
Flash device having a large planar area ono interpoly dielectric
CHARTERED SEMICONDUCTOR MFG20 citations92
US6495200B1Dec 17, 2002
Method to deposit a seeding layer for electroless copper plating
CHARTERED SEMICONDUCTOR MFG77 citations92
UNIV SINGAPORE
1 patentCHARTERED SEMICONDUCTOR MANU L
1 patentCHARTERED SEMIDCONDUCTOR MANUF
1 patentShowing the top 50 of 150 patents by PatentIndex Score.