P

Inventor

KIM HYUN-SU

KR76 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYUN-SU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

21 patents
US7432185B2Oct 7, 2008

Method of forming semiconductor device having stacked transistors

SAMSUNG ELECTRONICS CO LTD183 citations99
US7381989B2Jun 3, 2008

Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors

SAMSUNG ELECTRONICS CO LTD182 citations99
US7687331B2Mar 30, 2010

Stacked semiconductor device and method of fabrication

SAMSUNG ELECTRONICS CO LTD54 citations98
US7214620B2May 8, 2007

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

SAMSUNG ELECTRONICS CO LTD26 citations92
US7749840B2Jul 6, 2010

Methods of forming a semiconductor device including buried bit line

SAMSUNG ELECTRONICS CO LTD9 citations84
US7615817B2Nov 10, 2009

Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method

SAMSUNG ELECTRONICS CO LTD14 citations84
US7211506B2May 1, 2007

Methods of forming cobalt layers for semiconductor devices

SAMSUNG ELECTRONICS CO LTD12 citations84
US7172967B2Feb 6, 2007

Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US7846796B2Dec 7, 2010

Semiconductor devices including buried bit lines

SAMSUNG ELECTRONICS CO LTD6 citations74
US7833847B2Nov 16, 2010

Method of forming semiconductor device having stacked transistors

SAMSUNG ELECTRONICS CO LTD5 citations74
US7638433B2Dec 29, 2009

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7435634B2Oct 14, 2008

Methods of forming semiconductor devices having stacked transistors

SAMSUNG ELECTRONICS CO LTD8 citations74
US7662716B2Feb 16, 2010

Method for forming silicide contacts

SAMSUNG ELECTRONICS CO LTD6 citations73
US7045842B2May 16, 2006

Integrated circuit devices having self-aligned contact structures

SAMSUNG ELECTRONICS CO LTD6 citations73
US11114881B2Sep 7, 2021

Load switch circuit and method of controlling battery power using the same

SAMSUNG ELECTRONICS CO LTD4 citations71
US7936024B2May 3, 2011

Semiconductor devices having stacked structures

SAMSUNG ELECTRONICS CO LTD3 citations63
US7416968B2Aug 26, 2008

Methods of forming field effect transistors having metal silicide gate electrodes

SAMSUNG ELECTRONICS CO LTD2 citations63
US7285493B2Oct 23, 2007

Methods of forming a metal layer using transition metal precursors

SAMSUNG ELECTRONICS CO LTD2 citations62
US7238612B2Jul 3, 2007

Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US11213212B2Jan 4, 2022

Apparatus for measuring blood pressure, and method for measuring blood pressure by using same

SAMSUNG ELECTRONICS CO LTD1 citations60
US7560331B2Jul 14, 2009

Method for forming a silicided gate

SAMSUNG ELECTRONICS CO LTD2 citations59

SAMSUNG DISPLAY CO LTD

10 patents

HYUNDAI MOTOR CO LTD

6 patents

SOLUM CO LTD

3 patents

CHEIL JEDANG CORP

2 patents

SEMES CO LTD

2 patents

ASML NETHERLANDS BV

1 patent

SAMSUNG CORNING PREC MAT CO

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

LS CABLE & SYSTEM LTD

1 patent

SEOUL NAT UNIV R&DB FOUNDATION

1 patent

HYOSUNG TNS INC

1 patent

Showing the top 50 of 76 patents by PatentIndex Score.