Inventor
HWANG JIUNN-REN
TW36 patents
⚠️ This page may combine multiple inventors who share the name “HWANG JIUNN-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
20 patentsUS6853031B2Feb 8, 2005
Structure of a trapezoid-triple-gate FET
UNITED MICROELECTRONICS CORP41 citations92
US6664028B2Dec 16, 2003
Method of forming opening in wafer layer
UNITED MICROELECTRONICS CORP24 citations92
US6589881B2Jul 8, 2003
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP23 citations92
US6337269B1Jan 8, 2002
Method of fabricating a dual damascene structure
UNITED MICROELECTRONICS CORP22 citations92
US6839126B2Jan 4, 2005
Photolithography process with multiple exposures
UNITED MICROELECTRONICS CORP13 citations82
US6391757B1May 21, 2002
Dual damascene process
UNITED MICROELECTRONICS CORP17 citations82
US6579790B1Jun 17, 2003
Dual damascene manufacturing process
UNITED MICROELECTRONICS CORP8 citations74
US6638664B2Oct 28, 2003
Optical mask correction method
UNITED MICROELECTRONICS CORP7 citations71
US7326622B2Feb 5, 2008
Method of manufacturing semiconductor MOS transistor device
UNITED MICROELECTRONICS CORP4 citations63
US6680163B2Jan 20, 2004
Method of forming opening in wafer layer
UNITED MICROELECTRONICS CORP3 citations63
US6656667B2Dec 2, 2003
Multiple resist layer photolithographic process
UNITED MICROELECTRONICS CORP2 citations63
US6429425B1Aug 6, 2002
Method for forming a calibation standard to adjust a micro-bar of an electron microscope
UNITED MICROELECTRONICS CORP3 citations63
US6316340B1Nov 13, 2001
Photolithographic process for preventing corner rounding
UNITED MICROELECTRONICS CORP3 citations63
US6312855B1Nov 6, 2001
Three-phase phase shift mask
UNITED MICROELECTRONICS CORP4 citations62
US7063923B2Jun 20, 2006
Optical proximity correction method
UNITED MICROELECTRONICS CORP2 citations61
US6767679B2Jul 27, 2004
Correcting the polygon feature pattern with an optical proximity correction method
UNITED MICROELECTRONICS CORP3 citations61
US6974650B2Dec 13, 2005
Method of correcting a mask layout
UNITED MICROELECTRONICS CORP6 citations60
US7186657B2Mar 6, 2007
Method for patterning HfO2-containing dielectric
UNITED MICROELECTRONICS CORP6 citations59
US6380077B1Apr 30, 2002
Method of forming contact opening
UNITED MICROELECTRONICS CORP1 citations52
US7297450B2Nov 20, 2007
Optical proximity correction method
UNITED MICROELECTRONICS CORP1 citations51
TAIWAN SEMICONDUCTOR MFG
10 patentsUS7176084B2Feb 13, 2007
Self-aligned conductive spacer process for sidewall control gate of high-speed random access memory
TAIWAN SEMICONDUCTOR MFG66 citations98
US7482236B2Jan 27, 2009
Structure and method for a sidewall SONOS memory device
TAIWAN SEMICONDUCTOR MFG39 citations92
US8772056B2Jul 8, 2014
Dummy pattern design for thermal annealing
TAIWAN SEMICONDUCTOR MFG8 citations84
US7589387B2Sep 15, 2009
SONOS type two-bit FinFET flash memory cell
TAIWAN SEMICONDUCTOR MFG10 citations84
US7714376B2May 11, 2010
Non-volatile memory device with polysilicon spacer and method of forming the same
TAIWAN SEMICONDUCTOR MFG3 citations63
US7663134B2Feb 16, 2010
Memory array with a selector connected to multiple resistive cells
TAIWAN SEMICONDUCTOR MFG4 citations63
US7482231B2Jan 27, 2009
Manufacturing of memory array and periphery
TAIWAN SEMICONDUCTOR MFG5 citations63
US7405119B2Jul 29, 2008
Structure and method for a sidewall SONOS memory device
TAIWAN SEMICONDUCTOR MFG3 citations63
US7355236B2Apr 8, 2008
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG0 citations52
US7847335B2Dec 7, 2010
Non-volatile memory device having a generally L-shaped cross-section sidewall SONOS
TAIWAN SEMICONDUCTOR MFG0 citations42