Inventor · disambiguated record
Ryo Haga
Also filed as: HAGA RYO
21 granted patents·1 pending application·221 citations·filing 1995–2021
95Inventor score
Top patents by PatentIndex Score
22 records- 0187US7266025B2Semiconductor integrated circuitTOSHIBA KK·Filed 2003·Granted Sep 4, 2007·32 cites·11 claims
- 0283US7099217B2Semiconductor memory with sense amplifier equalizer having transistors with gate oxide films of different thicknessesTOSHIBA KK·Filed 2005·Granted Aug 29, 2006·9 cites·15 claims
- 0376US7525871B2Semiconductor integrated circuitTOSHIBA KK·Filed 2007·Granted Apr 28, 2009·7 cites·6 claims
- 0471US6104646ASemiconductor memory device having redundancy circuit with high rescue efficiencyTOSHIBA KK·Filed 1998·Granted Aug 15, 2000·31 cites·20 claims
- 0570US6459630B2Semiconductor memory device having replacing defective columns with redundant columnsTOSHIBA KK·Filed 2001·Granted Oct 1, 2002·19 cites·21 claims
- 0670US6307794B1Semiconductor memory device and signal line shifting methodTOSHIBA KK·Filed 2000·Granted Oct 23, 2001·19 cites·20 claims
- 0762US5555523ASemiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Sep 10, 1996·22 cites·20 claims
- 0861US7397714B2Setting method of chip initial stateTOSHIBA KK·Filed 2007·Granted Jul 8, 2008·3 cites·2 claims
- 0958US5754481AClock synchronous type DRAM with latchTOSHIBA KK·Filed 1997·Granted May 19, 1998·16 cites·8 claims
- 1057US6990028B2Semiconductor memory with sense amplifier equalizer having transistors with gate oxide films of different thicknessesTOSHIBA KK·Filed 2003·Granted Jan 24, 2006·6 cites·15 claims
- 1155US6429521B1Semiconductor integrated circuit device and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Aug 6, 2002·5 cites·20 claims
- 1252US5659507AClock synchronous type DRAM with data latchTOSHIBA KK·Filed 1996·Granted Aug 19, 1997·12 cites·21 claims
- 1349US6041004ASemiconductor device with high speed write capabilitiesTOSHIBA KK·Filed 1997·Granted Mar 21, 2000·12 cites·18 claims
- 1445US6802043B2Semiconductor device having a function block provided in a macro and operating independently of the macro and method for designing the sameTOSHIBA KK·Filed 2002·Granted Oct 5, 2004·3 cites·21 claims
- 1545US6104657ASemiconductor integrated circuit device for changing DRAM row addresses according to operation modeTOSHIBA KK·Filed 1998·Granted Aug 15, 2000·9 cites·42 claims
- 1641US6816419B2Semiconductor device having a redundant memory cell and method for recovering the sameTOSHIBA KK·Filed 2002·Granted Nov 9, 2004·2 cites·16 claims
- 1740US6066896ASemiconductor integrated circuit device and its manufacturing methodTOSHIBA KK·Filed 1997·Granted May 23, 2000·7 cites·45 claims
- 1837US12217783B2Semiconductor storage with two power source pathsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2021·Granted Feb 4, 2025·0 cites·14 claims
- 1936US6243317B1Semiconductor memory device which activates column lines at high speedTOSHIBA KK·Filed 1999·Granted Jun 5, 2001·4 cites·22 claims
- 2035US6956778B2Semiconductor device having a redundant memory cell and method for recovering the sameTOSHIBA KK·Filed 2004·Granted Oct 18, 2005·0 cites·5 claims
- 2133US6002631ASemiconductor memory device having a mode in which a plurality of data are simultaneously read out of memory cells of one row and different columnsTOSHIBA KK·Filed 1997·Granted Dec 14, 1999·3 cites·12 claims
- 2233US2006274586A1Semiconductor memory device with redundancy functionTAKAI TOMOHISA·Filed 2006·Application pending·0 cites
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