Inventor
YAMAGUCHI HITOSHI
JP74 patents
⚠️ This page may combine multiple inventors who share the name “YAMAGUCHI HITOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DENSO CORP
23 patentsUS6525375B1Feb 25, 2003
Semiconductor device having trench filled up with gate electrode
DENSO CORP79 citations98
US6118152ASep 12, 2000
Semiconductor device and method of manufacturing the same
DENSO CORP104 citations98
US7112519B2Sep 26, 2006
Semiconductor device manufacturing method
DENSO CORP28 citations93
US6836001B2Dec 28, 2004
Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench
DENSO CORP30 citations92
US6696323B2Feb 24, 2004
Method of manufacturing semiconductor device having trench filled up with gate electrode
DENSO CORP32 citations92
US6439514B1Aug 27, 2002
Semiconductor device with elements surrounded by trenches
DENSO CORP39 citations92
US6406982B2Jun 18, 2002
Method of improving epitaxially-filled trench by smoothing trench prior to filling
DENSO CORP27 citations92
US7170119B2Jan 30, 2007
Vertical type semiconductor device
DENSO CORP43 citations91
US7968953B2Jun 28, 2011
Semiconductor device including schottky barrier diode and method of manufacturing the same
DENSO CORP7 citations84
US7932553B2Apr 26, 2011
Semiconductor device including a plurality of cells
DENSO CORP8 citations84
US7928470B2Apr 19, 2011
Semiconductor device having super junction MOS transistor and method for manufacturing the same
DENSO CORP14 citations84
US7564095B2Jul 21, 2009
Semiconductor device and method for manufacturing the same
DENSO CORP9 citations84
US7553722B2Jun 30, 2009
Semiconductor device and method for manufacturing the same
DENSO CORP8 citations84
US7364971B2Apr 29, 2008
Method for manufacturing semiconductor device having super junction construction
DENSO CORP14 citations84
US7317213B2Jan 8, 2008
Semiconductor device having super junction structure and method for manufacturing the same
DENSO CORP14 citations84
US7037789B2May 2, 2006
Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench
DENSO CORP11 citations84
US6972458B2Dec 6, 2005
Horizontal MOS transistor
DENSO CORP19 citations84
US9515067B2Dec 6, 2016
Semiconductor device having switching element and free wheel diode and method for controlling the same
DENSO CORP9 citations83
US7601603B2Oct 13, 2009
Method for manufacturing semiconductor device
DENSO CORP10 citations83
US7345339B2Mar 18, 2008
Vertical channel FET with super junction construction
DENSO CORP6 citations74
US6781201B2Aug 24, 2004
Semiconductor device including power MOSFET and peripheral MOSFET device having gate electrodes formed in the trenches
DENSO CORP10 citations74
US8384153B2Feb 26, 2013
Semiconductor device and manufacturing method of the same
DENSO CORP5 citations72
US7911023B2Mar 22, 2011
Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same
DENSO CORP4 citations63
MASUMOTO TSUYOSHI
6 patentsUS5032196AJul 16, 1991
Amorphous alloys having superior processability
MASUMOTO TSUYOSHI128 citations98
US5318641AJun 7, 1994
Particle-dispersion type amorphous aluminum-alloy having high strength
MASUMOTO TSUYOSHI59 citations96
US5213148AMay 25, 1993
Production process of solidified amorphous alloy material
MASUMOTO TSUYOSHI74 citations96
US5074935ADec 24, 1991
Amorphous alloys superior in mechanical strength, corrosion resistance and formability
MASUMOTO TSUYOSHI71 citations96
US5344507ASep 6, 1994
Wear-resistant aluminum alloy and method for working thereof
MASUMOTO TSUYOSHI10 citations74
US5306363AApr 26, 1994
Thin aluminum-based alloy foil and wire and a process for producing same
MASUMOTO TSUYOSHI9 citations74
NIPPON DENSO CO
3 patentsUS5777365AJul 7, 1998
Semiconductor device having a silicon-on-insulator structure
NIPPON DENSO CO75 citations96
US5466303ANov 14, 1995
Semiconductor device and manufacturing method therefor
NIPPON DENSO CO31 citations93
US5874768AFeb 23, 1999
Semiconductor device having a high breakdown voltage
NIPPON DENSO CO43 citations92
DAIICHI SEIYAKU CO
2 patentsFUJI ELECTRIC CO LTD
2 patentsTPR CO LTD
2 patentsHONDA MOTOR CO LTD
1 patentFUJI ELECTRIC RES
1 patentYOSHIDA KOGYO KK
1 patent3M INNOVATIVE PROPERTIES CO
1 patentNIPPON OXYGEN CO LTD
1 patentTDK CORP
1 patentMABUCHI MOTOR CO
1 patentHARATANI SUSUMU
1 patentSAIKAKU HIROTAKA
1 patentMITSUBISHI GAS CHEMICAL CO
1 patentYAMAGUCHI HITOSHI
1 patentTOYOTA MOTOR CO LTD
1 patentShowing the top 50 of 74 patents by PatentIndex Score.