Inventor
MADURAWE RAMINDA U
US48 patents
⚠️ This page may combine multiple inventors who share the name “MADURAWE RAMINDA U”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ALTERA CORP
38 patentsUS6005806ADec 21, 1999
Nonvolatile configuration cells and cell arrays
ALTERA CORP139 citations99
US5949710ASep 7, 1999
Programmable interconnect junction
ALTERA CORP191 citations99
US5581501ADec 3, 1996
Nonvolatile SRAM cells and cell arrays
ALTERA CORP186 citations99
US6018476AJan 25, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP96 citations98
US5812450ASep 22, 1998
Nonvolatile SRAM cells and cell arrays
ALTERA CORP48 citations96
US5729495AMar 17, 1998
Dynamic nonvolatile memory cell
ALTERA CORP83 citations96
US6108239AAug 22, 2000
High-density nonvolatile memory cell
ALTERA CORP39 citations95
US6091102AJul 18, 2000
High-density nonvolatile memory cell
ALTERA CORP67 citations95
US5998263ADec 7, 1999
High-density nonvolatile memory cell
ALTERA CORP70 citations95
US5943267AAug 24, 1999
High-density nonvolatile memory cell
ALTERA CORP81 citations95
US6972234B1Dec 6, 2005
High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
ALTERA CORP22 citations93
US6417550B1Jul 9, 2002
High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
ALTERA CORP27 citations93
US6122209ASep 19, 2000
Method of margin testing programmable interconnect cell
ALTERA CORP18 citations92
US5905675AMay 18, 1999
Biasing scheme for reducing stress and improving reliability in EEPROM cells
ALTERA CORP26 citations92
US6646919B1Nov 11, 2003
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP14 citations83
US6573138B1Jun 3, 2003
Nonvolatile memory cell with low doping region
ALTERA CORP12 citations82
US6532170B1Mar 11, 2003
Nonvolatile configuration cells and cell arrays
ALTERA CORP11 citations82
US6366498B1Apr 2, 2002
Nonvolatile configuration cells and cell arrays
ALTERA CORP11 citations82
US6127217AOct 3, 2000
Method of forming highly resistive interconnects
ALTERA CORP19 citations82
US6002182ADec 14, 1999
Laser alignment target
ALTERA CORP15 citations82
US6828620B2Dec 7, 2004
Nonvolatile memory cell with low doping region
ALTERA CORP4 citations74
US6624524B1Sep 23, 2003
Laser alignment target
ALTERA CORP8 citations74
US6226201B1May 1, 2001
Techniques to configure nonvolatile cells and cell arrays
ALTERA CORP9 citations74
US6078521AJun 20, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP14 citations74
US6052309AApr 18, 2000
Nonvolatile configuration cells and cell arrays
ALTERA CORP7 citations74
US6028787AFeb 22, 2000
Nonvolatile static memory circuit
ALTERA CORP12 citations74
US5998295ADec 7, 1999
Method of forming a rough region on a substrate
ALTERA CORP10 citations74
US5898630AApr 27, 1999
Dynamic nonvolatile memory cell
ALTERA CORP10 citations74
US5805516ASep 8, 1998
Dynamic nonvolatile memory cell
ALTERA CORP8 citations74
US5740110AApr 14, 1998
Dynamic nonvolatile memory cell
ALTERA CORP7 citations74
US6187634B1Feb 13, 2001
Process for making an EEPROM active area castling
ALTERA CORP13 citations73
US6081449AJun 27, 2000
High-density nonvolatile memory cell
ALTERA CORP13 citations73
US6268623B1Jul 31, 2001
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP9 citations72
US7071104B1Jul 4, 2006
Laser alignment target
ALTERA CORP2 citations63
US6781883B1Aug 24, 2004
Apparatus and method for margin testing single polysilicon EEPROM cells
ALTERA CORP3 citations61
US6265746B1Jul 24, 2001
Highly resistive interconnects
ALTERA CORP4 citations61
US6624467B1Sep 23, 2003
EEPROM active area castling
ALTERA CORP0 citations51
US6472272B1Oct 29, 2002
Castled active area mask
ALTERA CORP1 citations51