Inventor
FUSEGAWA IZUMI
JP47 patents
⚠️ This page may combine multiple inventors who share the name “FUSEGAWA IZUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
43 patentsUS5248378ASep 28, 1993
Method and apparatus for producing silicon single crystal
SHINETSU HANDOTAI KK62 citations94
US6387466B1May 14, 2002
Single-crystal silicon wafer
SHINETSU HANDOTAI KK20 citations93
US7258744B2Aug 21, 2007
Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal
SHINETSU HANDOTAI KK24 citations92
US6913646B2Jul 5, 2005
Silicon single crystal wafer and method for producing silicon single crystal
SHINETSU HANDOTAI KK24 citations92
US6893499B2May 17, 2005
Silicon single crystal wafer and method for manufacturing the same
SHINETSU HANDOTAI KK21 citations92
US6632280B2Oct 14, 2003
Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
SHINETSU HANDOTAI KK19 citations92
US5462010AOct 31, 1995
Apparatus for supplying granular raw material for a semiconductor single crystal pulling apparatus
SHINETSU HANDOTAI KK32 citations92
US5373805ADec 20, 1994
Single crystal pulling apparatus
SHINETSU HANDOTAI KK43 citations92
US5361721ANov 8, 1994
Single crystal pulling apparatus
SHINETSU HANDOTAI KK26 citations92
US5359959ANov 1, 1994
Method for pulling up semi-conductor single crystal
SHINETSU HANDOTAI KK20 citations92
US5306387AApr 26, 1994
Method for pulling up semiconductor single crystal
SHINETSU HANDOTAI KK20 citations92
US6592662B2Jul 15, 2003
Method for preparing silicon single crystal and silicon single crystal
SHINETSU HANDOTAI KK22 citations91
US6423285B1Jul 23, 2002
Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the method
SHINETSU HANDOTAI KK23 citations91
US6117231ASep 12, 2000
Method of manufacturing semiconductor silicon single crystal wafer
SHINETSU HANDOTAI KK20 citations91
US4956153ASep 11, 1990
Apparatus for Czochralski single crystal growing
SHINETSU HANDOTAI KK42 citations90
US6565822B1May 20, 2003
Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer
SHINETSU HANDOTAI KK13 citations84
US5851283ADec 22, 1998
Method and apparatus for production of single crystal
SHINETSU HANDOTAI KK18 citations79
US7294196B2Nov 13, 2007
Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
SHINETSU HANDOTAI KK9 citations74
US7226507B2Jun 5, 2007
Method for producing single crystal and single crystal
SHINETSU HANDOTAI KK9 citations74
US7129123B2Oct 31, 2006
SOI wafer and a method for producing an SOI wafer
SHINETSU HANDOTAI KK8 citations74
US5720809AFeb 24, 1998
Crucible for pulling silicon single crystal
SHINETSU HANDOTAI KK15 citations74
US5340434AAug 23, 1994
Process for producing silicon single crystal
SHINETSU HANDOTAI KK10 citations74
US5110404AMay 5, 1992
Method for heat processing of silicon
SHINETSU HANDOTAI KK15 citations74
US5938841AAug 17, 1999
Device for producing a single crystal
SHINETSU HANDOTAI KK13 citations73
US5834322ANov 10, 1998
Heat treatment of Si single crystal
SHINETSU HANDOTAI KK14 citations73
US5534112AJul 9, 1996
Method for testing electrical properties of silicon single crystal
SHINETSU HANDOTAI KK7 citations73
US5386796AFeb 7, 1995
Method for testing quality of silicon wafer
SHINETSU HANDOTAI KK16 citations73
US5501172AMar 26, 1996
Method of growing silicon single crystals
SHINETSU HANDOTAI KK8 citations72
US6153009ANov 28, 2000
Method for producing a silicon single crystal and the silicon single crystal produced thereby
SHINETSU HANDOTAI KK13 citations71
US9938634B2Apr 10, 2018
Method of producing silicon single crystal
SHINETSU HANDOTAI KK3 citations70
US5766346AJun 16, 1998
Apparatus for producing silicon single crystal
SHINETSU HANDOTAI KK14 citations70
US7407866B2Aug 5, 2008
Soi wafer and a method for producing the same
SHINETSU HANDOTAI KK2 citations63
US7214268B2May 8, 2007
Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
SHINETSU HANDOTAI KK4 citations63
US5725661AMar 10, 1998
Equipment for producing silicon single crystals
SHINETSU HANDOTAI KK4 citations62
US5688319ANov 18, 1997
Method for testing electrical properties of silicon single crystal
SHINETSU HANDOTAI KK5 citations62
US5262338ANov 16, 1993
Method for fabrication of semiconductor device
SHINETSU HANDOTAI KK2 citations62
US7326395B2Feb 5, 2008
Method for producing a single crystal and silicon single crystal wafer
SHINETSU HANDOTAI KK2 citations61
US6632411B2Oct 14, 2003
Silicon wafer and method for producing silicon single crystal
SHINETSU HANDOTAI KK2 citations61
US7179330B2Feb 20, 2007
Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
SHINETSU HANDOTAI KK4 citations59
US9425345B2Aug 23, 2016
Epitaxial wafer and manufacturing method thereof
SHINETSU HANDOTAI KK1 citations52
US7909930B2Mar 22, 2011
Method for producing a silicon single crystal and a silicon single crystal
SHINETSU HANDOTAI KK0 citations51
US6764548B2Jul 20, 2004
Apparatus and method for producing silicon semiconductor single crystal
SHINETSU HANDOTAI KK0 citations50
US5871583AFeb 16, 1999
Apparatus for producing silicon single crystal
SHINETSU HANDOTAI KK0 citations42