Equipment for producing silicon single crystals

Abstract

An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.

What is claimed is: 
     
       1. An equipment for producing silicon single crystals wherein a magnetic-field generating apparatus is provided outside of a single crystal growth furnace to form a silicon single crystal pulling apparatus, an opeerator controlled operation control apparatus is provided for controlling operation of said pulling apparatus, a silicon single crystal is pulled under control of said operation control apparatus during application of a magnetic field of said magnetic-field generating apparatus to silicon melt contained in a quartz crucible of said pulling apparatus; characterized in that said operation control apparatus is disposed as spaced by a distance from said pulling apparatus to cause an intensity of the magnetic field immediately close to said operation control apparatus to be 300 gausses or less during pulling operation of the silicon single crystal. 
     
     
       2. An equipment for producing silicon single crystals as set forth in claim 1, wherein said operation control apparatus has a monitor for monitoring an image indicative of a crystal growing condition observed by a monitoring camera for monitoring of an inside condition of said growth furnace, said monitor being a liquid crystal display, a plasma display or a cathode-ray tube (CRT) covered with an electromagnetic shield.