Inventor · disambiguated record
Izumi Fusegawa
Also filed as: FUSEGAWA IZUMI
47 granted patents·2 pending applications·638 citations·filing 1988–2014
98Inventor score
Top patents by PatentIndex Score
49 records- 0187US9938634B2Method of producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2014·Granted Apr 10, 2018·3 cites·3 claims
- 0287US6913646B2Silicon single crystal wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 5, 2005·24 cites·10 claims
- 0387US5248378AMethod and apparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Sep 28, 1993·62 cites·1 claims
- 0485US5373805ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1992·Granted Dec 20, 1994·43 cites·10 claims
- 0584US6893499B2Silicon single crystal wafer and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2001·Granted May 17, 2005·21 cites·11 claims
- 0683US6423285B1Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the methodSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 23, 2002·23 cites·15 claims
- 0782US6592662B2Method for preparing silicon single crystal and silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 15, 2003·22 cites·17 claims
- 0881US7258744B2Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Aug 21, 2007·24 cites·58 claims
- 0981US4956153AApparatus for Czochralski single crystal growingSHINETSU HANDOTAI KK·Filed 1988·Granted Sep 11, 1990·42 cites·6 claims
- 1079US8085985B2Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystalURANO MASAHIKO·Filed 2007·Granted Dec 27, 2011·5 cites·29 claims
- 1178US6565822B1Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·13 cites·19 claims
- 1277US6632280B2Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·19 cites·15 claims
- 1373US7226507B2Method for producing single crystal and single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jun 5, 2007·9 cites·9 claims
- 1472US5462010AApparatus for supplying granular raw material for a semiconductor single crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1992·Granted Oct 31, 1995·32 cites·10 claims
- 1571US5306387AMethod for pulling up semiconductor single crystalSHINETSU HANDOTAI KK·Filed 1991·Granted Apr 26, 1994·20 cites·10 claims
- 1670US8147611B2Method of manufacturing single crystalSAKURADA MASAHIRO·Filed 2006·Granted Apr 3, 2012·2 cites·18 claims
- 1769US6387466B1Single-crystal silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted May 14, 2002·20 cites·6 claims
- 1869US5361721ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1993·Granted Nov 8, 1994·26 cites·8 claims
- 1966US6117231AMethod of manufacturing semiconductor silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 12, 2000·20 cites·8 claims
- 2065US7294196B2Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Nov 13, 2007·9 cites·16 claims
- 2165US5386796AMethod for testing quality of silicon waferSHINETSU HANDOTAI KK·Filed 1992·Granted Feb 7, 1995·16 cites·2 claims
- 2264US9425345B2Epitaxial wafer and manufacturing method thereofSHINETSU HANDOTAI KK·Filed 2012·Granted Aug 23, 2016·1 cites·19 claims
- 2363US9337013B2Silicon wafer and method for producing the sameFUSEGAWA IZUMI·Filed 2012·Granted May 10, 2016·2 cites·2 claims
- 2460US7179330B2Method of manufacturing silicon single crystal, silicon single crystal and silicon waferSHINETSU HANDOTAI KK·Filed 2003·Granted Feb 20, 2007·4 cites·4 claims
- 2560US5720809ACrucible for pulling silicon single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Feb 24, 1998·15 cites·1 claims
- 2660US5359959AMethod for pulling up semi-conductor single crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 1, 1994·20 cites·11 claims
- 2759US7129123B2SOI wafer and a method for producing an SOI waferSHINETSU HANDOTAI KK·Filed 2003·Granted Oct 31, 2006·8 cites·13 claims
- 2857US6153009AMethod for producing a silicon single crystal and the silicon single crystal produced therebySHINETSU HANDOTAI KK·Filed 1999·Granted Nov 28, 2000·13 cites·18 claims
- 2956US7214268B2Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2003·Granted May 8, 2007·4 cites·14 claims
- 3055US5340434AProcess for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1993·Granted Aug 23, 1994·10 cites·2 claims
- 3154US7326395B2Method for producing a single crystal and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2004·Granted Feb 5, 2008·2 cites·9 claims
- 3254US6632411B2Silicon wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·2 cites·20 claims
- 3352US2007101926A1Method of manufacturing silicon single crystal, silicon single crystal and silicon waferSHINETSU HANDOTAI KK·Filed 2007·Application pending·0 cites
- 3448US5834322AHeat treatment of Si single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Nov 10, 1998·14 cites·3 claims
- 3547US7407866B2Soi wafer and a method for producing the sameSHINETSU HANDOTAI KK·Filed 2004·Granted Aug 5, 2008·2 cites·6 claims
- 3647US5938841ADevice for producing a single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Aug 17, 1999·13 cites·22 claims
- 3747US5851283AMethod and apparatus for production of single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 22, 1998·18 cites·10 claims
- 3847US5766346AApparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Jun 16, 1998·14 cites·6 claims
- 3946US5501172AMethod of growing silicon single crystalsSHINETSU HANDOTAI KK·Filed 1995·Granted Mar 26, 1996·8 cites·7 claims
- 4046US2010139549A1Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single CrystalSHINETSU HANDOTAI KK·Filed 2006·Application pending·0 cites
- 4145US5110404AMethod for heat processing of siliconSHINETSU HANDOTAI KK·Filed 1990·Granted May 5, 1992·15 cites·11 claims
- 4243US9376336B2Quartz glass crucible, method for producing the same, and method for producing silicon single crystalKIMURA AKIHIRO·Filed 2011·Granted Jun 28, 2016·0 cites·5 claims
- 4343US7909930B2Method for producing a silicon single crystal and a silicon single crystalSHINETSU HANDOTAI KK·Filed 2005·Granted Mar 22, 2011·0 cites·16 claims
- 4441US6764548B2Apparatus and method for producing silicon semiconductor single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 20, 2004·0 cites·29 claims
- 4540US5534112AMethod for testing electrical properties of silicon single crystalSHINETSU HANDOTAI KK·Filed 1994·Granted Jul 9, 1996·7 cites·2 claims
- 4638US5688319AMethod for testing electrical properties of silicon single crystalSHINETSU HANDOTAI KK·Filed 1991·Granted Nov 18, 1997·5 cites·2 claims
- 4737US5725661AEquipment for producing silicon single crystalsSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 10, 1998·4 cites·2 claims
- 4830US5871583AApparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Feb 16, 1999·0 cites·5 claims
- 4929US5262338AMethod for fabrication of semiconductor deviceSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 16, 1993·2 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →