Inventor · disambiguated record
Tomohiko Ohta
Also filed as: OHTA TOMOHIKO
34 granted patents·6 pending applications·403 citations·filing 1995–2021
97Inventor score
Files withSHINETSU HANDOTAI KK32UNIV NORTH CAROLINA2UNIV SCHOOL ST MARIANNA2LOCOMOGENE INC1OHTA TOMOHIKO1
Top patents by PatentIndex Score
40 records- 0190US5704973AApparatus and method for the uniform distribution of crystal defects upon a silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Jan 6, 1998·68 cites·7 claims
- 0287US6913646B2Silicon single crystal wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 5, 2005·24 cites·10 claims
- 0384US6893499B2Silicon single crystal wafer and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2001·Granted May 17, 2005·21 cites·11 claims
- 0483US6423285B1Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the methodSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 23, 2002·23 cites·15 claims
- 0582US6592662B2Method for preparing silicon single crystal and silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 15, 2003·22 cites·17 claims
- 0680US6190452B1Silicon single crystal wafer and method for producing itSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·32 cites·16 claims
- 0779US6482260B2Silicon single crystal wafer and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Nov 19, 2002·13 cites·4 claims
- 0878US6565822B1Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·13 cites·19 claims
- 0977US6632280B2Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·19 cites·15 claims
- 1073US7226507B2Method for producing single crystal and single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jun 5, 2007·9 cites·9 claims
- 1173US7078203B1Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the sameUNIV NORTH CAROLINA·Filed 2000·Granted Jul 18, 2006·2 cites·11 claims
- 1266US6117231AMethod of manufacturing semiconductor silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 12, 2000·20 cites·8 claims
- 1365US7294196B2Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Nov 13, 2007·9 cites·16 claims
- 1464US12084788B2Method for producing a silicon single crystal doped with nitrogen and having a controlled amount of carbon impuritiesSHINETSU HANDOTAI KK·Filed 2020·Granted Sep 10, 2024·0 cites·12 claims
- 1562US6605152B2Catch pan for melt leakage in apparatus for pulling single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Aug 12, 2003·4 cites·12 claims
- 1660US7179330B2Method of manufacturing silicon single crystal, silicon single crystal and silicon waferSHINETSU HANDOTAI KK·Filed 2003·Granted Feb 20, 2007·4 cites·4 claims
- 1759US7129123B2SOI wafer and a method for producing an SOI waferSHINETSU HANDOTAI KK·Filed 2003·Granted Oct 31, 2006·8 cites·13 claims
- 1858US7625732B2Isolated DNA encoding cullin regulators ROC1 and ROC2, isolated proteins encoded by the same, and methods utilizing the sameUNIV NORTH CAROLINA·Filed 2006·Granted Dec 1, 2009·0 cites·2 claims
- 1957US6153009AMethod for producing a silicon single crystal and the silicon single crystal produced therebySHINETSU HANDOTAI KK·Filed 1999·Granted Nov 28, 2000·13 cites·18 claims
- 2057US5972106ADevice and method for producing single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Oct 26, 1999·18 cites·18 claims
- 2156US6156119ASilicon single crystal and method for producing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 5, 2000·13 cites·12 claims
- 2256US5882398AMethod of manufacturing single crystal of siliconSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 16, 1999·12 cites·11 claims
- 2354US6632411B2Silicon wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 14, 2003·2 cites·20 claims
- 2453US12188153B2Single-crystal pulling apparatus with saddle-shaped superconducting coils and single-crystal pulling methodSHINETSU HANDOTAI KK·Filed 2021·Granted Jan 7, 2025·0 cites·6 claims
- 2553US2010041096A1Carcinostatic method using BRCA1-BARD1 pathwayOHTA TOMOHIKO·Filed 2009·Application pending·0 cites
- 2652US2007101926A1Method of manufacturing silicon single crystal, silicon single crystal and silicon waferSHINETSU HANDOTAI KK·Filed 2007·Application pending·0 cites
- 2751US7201801B2Heater for manufacturing a crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 10, 2007·1 cites·25 claims
- 2851US2022120753A1Method for determining prognosis of cancerUNIV TOKYO·Filed 2019·Application pending·0 cites
- 2950US12227872B2Single-crystal pulling apparatus and single-crystal pulling methodSHIN ETSU HANDOTAI CO LTD·Filed 2020·Granted Feb 18, 2025·0 cites·10 claims
- 3050US2010113557A1Method for prevention of tumorUNIV SCHOOL ST MARIANNA·Filed 2006·Application pending·0 cites
- 3149US6071337AApparatus and method for producing crystals by the czochralski method and crystals produced by this methodSHINETSU HANDOTAI KK·Filed 1997·Granted Jun 6, 2000·9 cites·10 claims
- 3247US5851283AMethod and apparatus for production of single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 22, 1998·18 cites·10 claims
- 3347US5766346AApparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Jun 16, 1998·14 cites·6 claims
- 3444US9777394B2Method of producing silicon single crystal ingotSHINETSU HANDOTAI KK·Filed 2014·Granted Oct 3, 2017·0 cites·3 claims
- 3544US2008274479A1Assay of Ubiquitinization of Synoviolin and Use Thereof in ScreeningLOCOMOGENE INC·Filed 2005·Application pending·0 cites
- 3642US5948163AApparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing methodSHINETSU HANDOTAI KK·Filed 1997·Granted Sep 7, 1999·8 cites·20 claims
- 3741US7521334B2Method for producing direct bonded wafer and direct bonded waferSHINETSU HANDOTAI KK·Filed 2005·Granted Apr 21, 2009·0 cites·22 claims
- 3841US6764548B2Apparatus and method for producing silicon semiconductor single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 20, 2004·0 cites·29 claims
- 3941US2009130760A1Method for the ubiquitination of common subunit of rna polymerasesUNIV SCHOOL ST MARIANNA·Filed 2006·Application pending·0 cites
- 4037US5725661AEquipment for producing silicon single crystalsSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 10, 1998·4 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →