P

Inventor

HUANG YEN-CHUN

TW37 patents
⚠️ This page may combine multiple inventors who share the name “HUANG YEN-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US9812358B1Nov 7, 2017

FinFET structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US10361113B2Jul 23, 2019

Formation and in-situ treatment processes for gap fill layers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12218221B2Feb 4, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11798984B2Oct 24, 2023

Seamless gap fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239310B2Feb 1, 2022

Seamless gap fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222826B2Jan 11, 2022

FinFET structure and device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937686B2Mar 2, 2021

Formation and in-situ treatment processes for gap fill layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10354923B2Jul 16, 2019

Semiconductor device and method for atomic layer deposition of a dielectric over a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12170199B2Dec 17, 2024

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11791154B2Oct 17, 2023

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11450526B2Sep 20, 2022

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12527019B2Jan 13, 2026

Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10672866B2Jun 2, 2020

Seamless gap fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10643902B2May 5, 2020

Semiconductor device and method for atomic layer deposition of a dielectric over a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483169B2Nov 19, 2019

FinFET cut-last process using oxide trench fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10115597B2Oct 30, 2018

Self-aligned dual-metal silicide and germanide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10084040B2Sep 25, 2018

Seamless gap fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9559182B2Jan 31, 2017

Self-aligned dual-metal silicide and germanide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11444173B2Sep 13, 2022

Semiconductor device structure with salicide layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12148672B2Nov 19, 2024

Hybrid fin structure of semiconductor device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9437712B2Sep 6, 2016

High performance self aligned contacts and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42

TAIWAN SEMICONDUCTOR MFG

5 patents

CORETRONIC CORP

3 patents

GLYCOLYSIS BIOMED CO LTD

2 patents

HSIAO LI-HUI

1 patent

NATIONAL YANG MING CHIAO TUNG UNIV

1 patent

MAI SHENG-EN

1 patent

CHIEN HAN-EN

1 patent

JINDAI AUTO SUPPLIES CO LTD

1 patent

CHING FENG HOME FASHIONS CO LTD

1 patent