P

Inventor

YEO KYOUNG-HWAN

KR33 patents
⚠️ This page may combine multiple inventors who share the name “YEO KYOUNG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US7670912B2Mar 2, 2010

Methods of fabricating multichannel metal oxide semiconductor (MOS) transistors

SAMSUNG ELECTRONICS CO LTD172 citations99
US7361545B2Apr 22, 2008

Field effect transistor with buried gate pattern

SAMSUNG ELECTRONICS CO LTD26 citations93
US7803675B2Sep 28, 2010

Gate-all-around type semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD33 citations92
US9947672B2Apr 17, 2018

Semiconductor devices including a dummy gate structure on a fin

SAMSUNG ELECTRONICS CO LTD4 citations84
US7943998B2May 17, 2011

Nonvolatile memory devices having stacked structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7605025B2Oct 20, 2009

Methods of forming MOSFETS using crystalline sacrificial structures

SAMSUNG ELECTRONICS CO LTD14 citations84
US10566326B2Feb 18, 2020

Semiconductor devices including a device isolation region in a substrate and/or fin

SAMSUNG ELECTRONICS CO LTD7 citations82
US9741854B2Aug 22, 2017

Method for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD16 citations82
US7321144B2Jan 22, 2008

Semiconductor device employing buried insulating layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US10096605B2Oct 9, 2018

Semiconductor devices including a dummy gate structure on a fin

SAMSUNG ELECTRONICS CO LTD3 citations73
US10043873B2Aug 7, 2018

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations71
US7955932B2Jun 7, 2011

Single electron transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US7575964B2Aug 18, 2009

Semiconductor device employing buried insulating layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7429504B2Sep 30, 2008

Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods

SAMSUNG ELECTRONICS CO LTD6 citations63
US6093653AJul 25, 2000

Gas mixture for etching a polysilicon electrode layer and etching method using the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US10943904B2Mar 9, 2021

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations61
US10446561B2Oct 15, 2019

Semiconductor devices including a dummy gate structure on a fin

SAMSUNG ELECTRONICS CO LTD0 citations52
US8008141B2Aug 30, 2011

Method of fabricating a semiconductor device with multiple channels

SAMSUNG ELECTRONICS CO LTD0 citations52
US7579657B2Aug 25, 2009

Semiconductor device with multiple channels

SAMSUNG ELECTRONICS CO LTD0 citations52
US10854608B2Dec 1, 2020

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10685960B2Jun 16, 2020

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10672890B2Jun 2, 2020

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations40
US10804264B2Oct 13, 2020

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations38
US10763156B2Sep 1, 2020

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations38

PARK SANG-JINE

3 patents

OH CHANG-WOO

2 patents

SUK SUNG-DAE

2 patents

YEO KYOUNG HWAN

1 patent

LI MING

1 patent