Inventor
YEO KYOUNG-HWAN
KR33 patents
⚠️ This page may combine multiple inventors who share the name “YEO KYOUNG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS7670912B2Mar 2, 2010
Methods of fabricating multichannel metal oxide semiconductor (MOS) transistors
SAMSUNG ELECTRONICS CO LTD172 citations99
US7361545B2Apr 22, 2008
Field effect transistor with buried gate pattern
SAMSUNG ELECTRONICS CO LTD26 citations93
US7803675B2Sep 28, 2010
Gate-all-around type semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD33 citations92
US9947672B2Apr 17, 2018
Semiconductor devices including a dummy gate structure on a fin
SAMSUNG ELECTRONICS CO LTD4 citations84
US7943998B2May 17, 2011
Nonvolatile memory devices having stacked structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7605025B2Oct 20, 2009
Methods of forming MOSFETS using crystalline sacrificial structures
SAMSUNG ELECTRONICS CO LTD14 citations84
US10566326B2Feb 18, 2020
Semiconductor devices including a device isolation region in a substrate and/or fin
SAMSUNG ELECTRONICS CO LTD7 citations82
US9741854B2Aug 22, 2017
Method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD16 citations82
US7321144B2Jan 22, 2008
Semiconductor device employing buried insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US10096605B2Oct 9, 2018
Semiconductor devices including a dummy gate structure on a fin
SAMSUNG ELECTRONICS CO LTD3 citations73
US10043873B2Aug 7, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US7955932B2Jun 7, 2011
Single electron transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US7575964B2Aug 18, 2009
Semiconductor device employing buried insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7429504B2Sep 30, 2008
Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods
SAMSUNG ELECTRONICS CO LTD6 citations63
US6093653AJul 25, 2000
Gas mixture for etching a polysilicon electrode layer and etching method using the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US10943904B2Mar 9, 2021
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US10446561B2Oct 15, 2019
Semiconductor devices including a dummy gate structure on a fin
SAMSUNG ELECTRONICS CO LTD0 citations52
US8008141B2Aug 30, 2011
Method of fabricating a semiconductor device with multiple channels
SAMSUNG ELECTRONICS CO LTD0 citations52
US7579657B2Aug 25, 2009
Semiconductor device with multiple channels
SAMSUNG ELECTRONICS CO LTD0 citations52
US10854608B2Dec 1, 2020
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10685960B2Jun 16, 2020
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10672890B2Jun 2, 2020
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations40
US10804264B2Oct 13, 2020
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations38
US10763156B2Sep 1, 2020
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations38
PARK SANG-JINE
3 patentsUS9299700B2Mar 29, 2016
Semiconductor devices including a dummy gate structure on a fin
PARK SANG-JINE33 citations97
US9755079B2Sep 5, 2017
Semiconductor devices including insulating gates and methods for fabricating the same
PARK SANG-JINE13 citations83
US9548309B2Jan 17, 2017
Semiconductor devices including a dummy gate structure on a fin
PARK SANG-JINE10 citations83