Inventor
HAN JEONG-UK
KR53 patents
⚠️ This page may combine multiple inventors who share the name “HAN JEONG-UK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
46 patentsUS7285820B2Oct 23, 2007
Flash memory device using semiconductor fin and method thereof
SAMSUNG ELECTRONICS CO LTD263 citations99
US7973314B2Jul 5, 2011
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD182 citations98
US7323740B2Jan 29, 2008
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD58 citations97
US7005349B2Feb 28, 2006
Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process
SAMSUNG ELECTRONICS CO LTD48 citations96
US6794711B2Sep 21, 2004
Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the device
SAMSUNG ELECTRONICS CO LTD29 citations89
US7936003B2May 3, 2011
Semiconductor device having transistor with vertical gate electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7928492B2Apr 19, 2011
Non-volatile memory integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7820516B2Oct 26, 2010
Methods of manufacturing non-volatile memory devices having a vertical channel
SAMSUNG ELECTRONICS CO LTD17 citations84
US7553725B2Jun 30, 2009
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7514739B2Apr 7, 2009
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7511334B2Mar 31, 2009
Twin-ONO-type SONOS memory
SAMSUNG ELECTRONICS CO LTD15 citations84
US7492002B2Feb 17, 2009
Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008
Split gate non-volatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7271061B2Sep 18, 2007
Method of fabricating non-volatile memory
SAMSUNG ELECTRONICS CO LTD14 citations84
US6914290B2Jul 5, 2005
Split-gate type nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US6323517B1Nov 27, 2001
Non-volatile memory device with single-layered overwriting transistor
SAMSUNG ELECTRONICS CO LTD16 citations84
US7038270B2May 2, 2006
Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations73
US8362545B2Jan 29, 2013
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7791951B2Sep 7, 2010
Methods of operating non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7515468B2Apr 7, 2009
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7411243B2Aug 12, 2008
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7351636B2Apr 1, 2008
Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
SAMSUNG ELECTRONICS CO LTD2 citations63
US7190024B2Mar 13, 2007
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD2 citations63
US7733696B2Jun 8, 2010
Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems
SAMSUNG ELECTRONICS CO LTD5 citations62
US7602008B2Oct 13, 2009
Split gate non-volatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7598139B2Oct 6, 2009
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7534688B2May 19, 2009
Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7320913B2Jan 22, 2008
Methods of forming split-gate non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US6197636B1Mar 6, 2001
Electrically erasable programmable read-only memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7512003B2Mar 31, 2009
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations61
US7183157B2Feb 27, 2007
Nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD4 citations61
US6770920B2Aug 3, 2004
Nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD4 citations61
US7932149B2Apr 26, 2011
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations59
US7800158B2Sep 21, 2010
Semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7602004B2Oct 13, 2009
Semiconductor device and methods for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7586146B2Sep 8, 2009
Non-volatile memory and method of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7531410B2May 12, 2009
Semiconductor flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7041557B2May 9, 2006
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD0 citations52
US8053342B2Nov 8, 2011
Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7777256B2Aug 17, 2010
Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7638387B2Dec 29, 2009
Mask ROM and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7855410B2Dec 21, 2010
Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion
SAMSUNG ELECTRONICS CO LTD0 citations50
US7696561B2Apr 13, 2010
Non-volatile memory device, method of manufacturing the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US7944753B2May 17, 2011
Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same
SAMSUNG ELECTRONICS CO LTD1 citations49
US7839680B2Nov 23, 2010
Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US7429766B2Sep 30, 2008
Split gate type nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations42
JEONG YONG-SIK
1 patentKANG SANG-WOO
1 patentJEON HEE-SEOG
1 patentYU TEA-KWANG
1 patentShowing the top 50 of 53 patents by PatentIndex Score.