Inventor

IWASA SHOICHI

JP33 patents

⚠️ This page may combine multiple inventors who share the name “IWASA SHOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IWASA SHOICHI

NIPPON STEEL CORP

Electrically alterable n-bit per cell non-volatile memory with reference cells

Method of writing into non-volatile semiconductor memory

MOS-type semiconductor device and method of making the same

Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same

Semiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing same

Semiconductor device including a capacitor responsible for a power supply voltage to semiconductor device and capable of blocking an increased voltage

Semiconductor storage device

Semiconductor memory device and method for fabricating the same

Semiconductor memory device and method of using the same

Insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor

Non-volatile semiconductor memory device

Nonvolatile semiconductor memory with raised source and drain

MOS memory device

Semiconductor device and a method of manufacturing the same

Semiconductor device and a method of manufacturing the same

Semiconductor memory device having word line conductors provided at lower level than memory cell capacitor and method of manufacturing same

Method of making a semiconductor device with a stacked cell structure

Semiconductor memory device with memory cells each having transistor and capacitor and method of making the same

Semiconductor memory device and a method of making the same

Nonvolatile semiconductor memory device

Semiconductor device and method of manufacturing the same

Semiconductor integrated unit

Semiconductor device and a MOS transistor for circuit protection

MOS semiconductor memory device

Method of manufacturing an insulated-gate field-effect transistor in a semiconductor device in which source/drain electrodes are defined by formation of silicide on a gate electrode and a field-effect transistor

NEC CORP

Non-volatile semiconductor memory device having word lines (&#34;control gates&#34;) embedded in substrate

Floating gate type electrically programmable read only memory cell with variable threshold level in erased state

Two-transistor type non-volatile semiconductor memory

Integrated circuit semiconductor device having improved wiring structure

Erasable programmable read only memory device improved in operation speed and in the amount of read out current

UNITED MICROELECTRONICS CORP

Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device

Semiconductor device having multiple transistors sharing a common gate

UNITED MICROELECTRONICS

Semiconductor device and a method of manufacturing the same

Non-volatile semiconductor memory device having word lines ("control gates") embedded in substrate