Inventor
BLOSSE ALAIN
US20 patents
⚠️ This page may combine multiple inventors who share the name “BLOSSE ALAIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
15 patentsUS7323411B1Jan 29, 2008
Method of selective tungsten deposition on a silicon surface
CYPRESS SEMICONDUCTOR CORP90 citations97
US6399512B1Jun 4, 2002
Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer
CYPRESS SEMICONDUCTOR CORP83 citations96
US7189652B1Mar 13, 2007
Selective oxidation of gate stack
CYPRESS SEMICONDUCTOR CORP21 citations92
US6635566B1Oct 21, 2003
Method of making metallization and contact structures in an integrated circuit
CYPRESS SEMICONDUCTOR CORP31 citations89
US6869850B1Mar 22, 2005
Self-aligned contact structure with raised source and drain
CYPRESS SEMICONDUCTOR CORP13 citations84
US6680516B1Jan 20, 2004
Controlled thickness gate stack
CYPRESS SEMICONDUCTOR CORP17 citations84
US6902993B2Jun 7, 2005
Gate electrode for MOS transistors
CYPRESS SEMICONDUCTOR CORP15 citations83
US6803321B1Oct 12, 2004
Nitride spacer formation
CYPRESS SEMICONDUCTOR CORP12 citations74
US6887784B1May 3, 2005
Self aligned metal interconnection and method of making the same
CYPRESS SEMICONDUCTOR CORP7 citations73
US6841878B1Jan 11, 2005
Integrated circuit with improved RC delay
CYPRESS SEMICONDUCTOR CORP6 citations73
US6660661B1Dec 9, 2003
Integrated circuit with improved RC delay
CYPRESS SEMICONDUCTOR CORP8 citations73
US7151048B1Dec 19, 2006
Poly/silicide stack and method of forming the same
CYPRESS SEMICONDUCTOR CORP2 citations62
US6979640B1Dec 27, 2005
Contact structure and method of making the same
CYPRESS SEMICONDUCTOR CORP4 citations61
US7256083B1Aug 14, 2007
Nitride layer on a gate stack
CYPRESS SEMICONDUCTOR CORP1 citations52
US7018942B1Mar 28, 2006
Integrated circuit with improved RC delay
CYPRESS SEMICONDUCTOR CORP0 citations52