P

Inventor

KIM CHEOL

KR63 patents
⚠️ This page may combine multiple inventors who share the name “KIM CHEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US8987836B2Mar 24, 2015

Field effect transistor having fin base and at lease one fin protruding from fin base

SAMSUNG ELECTRONICS CO LTD40 citations96
US9831003B2Nov 28, 2017

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD30 citations94
US10347355B2Jul 9, 2019

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD4 citations84
US9659669B2May 23, 2017

Device and method for repairing memory cell and memory system including the device

SAMSUNG ELECTRONICS CO LTD6 citations84
US9570132B2Feb 14, 2017

Address-remapped memory chip, memory module and memory system including the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US10553582B2Feb 4, 2020

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US9627542B2Apr 18, 2017

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US9299811B2Mar 29, 2016

Methods of fabricating semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations83
US9190404B2Nov 17, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations83
US8906757B2Dec 9, 2014

Methods of forming patterns of a semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations83
US9704558B2Jul 11, 2017

Refresh method of controlling self-refresh cycle with temperature

SAMSUNG ELECTRONICS CO LTD8 citations82
US6999203B1Feb 14, 2006

Circuit and method for multi-bit processing of gray scale image in laser beam printer

SAMSUNG ELECTRONICS CO LTD7 citations74
US9984925B2May 29, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US11211450B2Dec 28, 2021

Integrated circuit device and method of forming the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US9673303B2Jun 6, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US9312181B2Apr 12, 2016

Semiconductor device, electronic device including the same and manufacturing methods thereof

SAMSUNG ELECTRONICS CO LTD3 citations71
US10482962B2Nov 19, 2019

TCAM device and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations69
US10991825B2Apr 27, 2021

Semiconductor device including non-active fins and separation regions

SAMSUNG ELECTRONICS CO LTD2 citations66
US12218193B2Feb 4, 2025

Integrated circuit device and method of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11271110B2Mar 8, 2022

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE49375EJan 17, 2023

Field effect transistor having fin base and at least one fin protruding from fin base

SAMSUNG ELECTRONICS CO LTD0 citations61
US12527069B2Jan 13, 2026

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12317553B2May 27, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US12148749B2Nov 19, 2024

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10319858B2Jun 11, 2019

Semiconductor devices having lower and upper fins and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9455047B2Sep 27, 2016

Memory device to correct defect cell generated after packaging

SAMSUNG ELECTRONICS CO LTD1 citations52
US12575175B2Mar 10, 2026

Multiple gate-all-around semiconductor devices with gate separation

SAMSUNG ELECTRONICS CO LTD0 citations51
US12243754B2Mar 4, 2025

Semiconductor device and a method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12046599B2Jul 23, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
USRE48367EDec 22, 2020

Field effect transistor having fin base and at least one fin protruding from fin base

SAMSUNG ELECTRONICS CO LTD0 citations51
US10797051B2Oct 6, 2020

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US8379477B2Feb 19, 2013

Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same

SAMSUNG ELECTRONICS CO LTD1 citations51

KWON BYOUNG-HO

2 patents

HYOSUNG CORP

2 patents

KIM JUNG-SIK

2 patents

KIM CHEOL

2 patents

SOHN KYO-MIN

1 patent

KIM SUNG MIN

1 patent

LEE TAE JONG

1 patent

LEE BOK-YOUNG

1 patent

LIM YOUNG-IL

1 patent

MUN SEUNG JIN

1 patent

CHOI YONG JOON

1 patent

LEE DONG-HYUK

1 patent

LEE JUNG-CHAN

1 patent

JUNG HAE-OK

1 patent

Showing the top 50 of 63 patents by PatentIndex Score.