P

Inventor

SHIM SANG-WON

KR30 patents
⚠️ This page may combine multiple inventors who share the name “SHIM SANG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US10672791B2Jun 2, 2020

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US9779790B2Oct 3, 2017

Nonvolatile memory device and method of driving word line of the nonvolatile memory

SAMSUNG ELECTRONICS CO LTD8 citations84
US9142313B2Sep 22, 2015

Memory system and programming method thereof

SAMSUNG ELECTRONICS CO LTD8 citations84
US9870833B2Jan 16, 2018

Nonvolatile memory device including page buffer and method for verifying program operation thereof

SAMSUNG ELECTRONICS CO LTD7 citations80
US11211403B2Dec 28, 2021

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11112997B2Sep 7, 2021

Storage device and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations73
US10978481B2Apr 13, 2021

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10410728B2Sep 10, 2019

Three dimensional nonvolatile memory device and programming method utilizing multiple wordline inhibit voltages to reduce hot carrier injection

SAMSUNG ELECTRONICS CO LTD4 citations73
US10153050B2Dec 11, 2018

Non-volatile memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9502124B2Nov 22, 2016

Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels

SAMSUNG ELECTRONICS CO LTD4 citations73
US9396800B2Jul 19, 2016

Memory system and programming method thereof

SAMSUNG ELECTRONICS CO LTD5 citations73
US11515325B2Nov 29, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11495541B2Nov 8, 2022

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11158379B2Oct 26, 2021

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11043274B2Jun 22, 2021

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11198154B2Dec 14, 2021

Method and apparatus for providing vibration in electronic device

SAMSUNG ELECTRONICS CO LTD2 citations70
US11011208B2May 18, 2021

Semiconductor memory device including parallel substrates in three dimensional structures

SAMSUNG ELECTRONICS CO LTD3 citations69
US11854982B2Dec 26, 2023

Three-dimensional semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11798629B2Oct 24, 2023

Nonvolatile memory device, storage device, and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11233068B2Jan 25, 2022

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11532634B2Dec 20, 2022

Vertical memory device including substrate control circuit and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10699782B2Jun 30, 2020

Nonvolatile memory device and method of operation with a word line setup time based on two sequential read voltages

SAMSUNG ELECTRONICS CO LTD0 citations52
US10388367B2Aug 20, 2019

Nonvolatile memory device with controlled word line setup time

SAMSUNG ELECTRONICS CO LTD0 citations52
US12592266B2Mar 31, 2026

Memory device including voltage generating circuit and operation method of memory device

SAMSUNG ELECTRONICS CO LTD0 citations47

SHIM SANG-WON

2 patents

PARK SANG-WON

1 patent

LIM BONG SOON

1 patent

AHN YANG-LO

1 patent

KIM TAE-HYUN

1 patent