Inventor
SHIM SANG-WON
KR30 patents
⚠️ This page may combine multiple inventors who share the name “SHIM SANG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS10672791B2Jun 2, 2020
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US9779790B2Oct 3, 2017
Nonvolatile memory device and method of driving word line of the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations84
US9142313B2Sep 22, 2015
Memory system and programming method thereof
SAMSUNG ELECTRONICS CO LTD8 citations84
US9870833B2Jan 16, 2018
Nonvolatile memory device including page buffer and method for verifying program operation thereof
SAMSUNG ELECTRONICS CO LTD7 citations80
US11211403B2Dec 28, 2021
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11112997B2Sep 7, 2021
Storage device and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US10978481B2Apr 13, 2021
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10410728B2Sep 10, 2019
Three dimensional nonvolatile memory device and programming method utilizing multiple wordline inhibit voltages to reduce hot carrier injection
SAMSUNG ELECTRONICS CO LTD4 citations73
US10153050B2Dec 11, 2018
Non-volatile memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9502124B2Nov 22, 2016
Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels
SAMSUNG ELECTRONICS CO LTD4 citations73
US9396800B2Jul 19, 2016
Memory system and programming method thereof
SAMSUNG ELECTRONICS CO LTD5 citations73
US11515325B2Nov 29, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11495541B2Nov 8, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11158379B2Oct 26, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11043274B2Jun 22, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11198154B2Dec 14, 2021
Method and apparatus for providing vibration in electronic device
SAMSUNG ELECTRONICS CO LTD2 citations70
US11011208B2May 18, 2021
Semiconductor memory device including parallel substrates in three dimensional structures
SAMSUNG ELECTRONICS CO LTD3 citations69
US11854982B2Dec 26, 2023
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11798629B2Oct 24, 2023
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11233068B2Jan 25, 2022
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11532634B2Dec 20, 2022
Vertical memory device including substrate control circuit and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10699782B2Jun 30, 2020
Nonvolatile memory device and method of operation with a word line setup time based on two sequential read voltages
SAMSUNG ELECTRONICS CO LTD0 citations52
US10388367B2Aug 20, 2019
Nonvolatile memory device with controlled word line setup time
SAMSUNG ELECTRONICS CO LTD0 citations52
US12592266B2Mar 31, 2026
Memory device including voltage generating circuit and operation method of memory device
SAMSUNG ELECTRONICS CO LTD0 citations47