Inventor
DERNER SCOTT JAMES
US37 patents
Patents
37 patentsUS9858979B1Jan 2, 2018
Reprogrammable non-volatile ferroelectric latch for use with a memory controller
MICRON TECHNOLOGY INC97 citations98
US10163480B1Dec 25, 2018
Periphery fill and localized capacitance
MICRON TECHNOLOGY INC26 citations94
US9786347B1Oct 10, 2017
Cell-specific reference generation and sensing
MICRON TECHNOLOGY INC14 citations92
US9734886B1Aug 15, 2017
Cell-based reference voltage generation
MICRON TECHNOLOGY INC17 citations92
US10535397B1Jan 14, 2020
Sensing techniques for multi-level cells
MICRON TECHNOLOGY INC11 citations86
US9792973B2Oct 17, 2017
Ferroelectric memory cell sensing
MICRON TECHNOLOGY INC8 citations84
US11127450B2Sep 21, 2021
Pre-writing memory cells of an array
MICRON TECHNOLOGY INC1 citations73
US10529402B2Jan 7, 2020
Ferroelectric memory cell sensing
MICRON TECHNOLOGY INC2 citations73
US10510394B2Dec 17, 2019
Reprogrammable non-volatile ferroelectric latch for use with a memory controller
MICRON TECHNOLOGY INC2 citations73
US10311934B2Jun 4, 2019
Cell-specific reference generation and sensing
MICRON TECHNOLOGY INC1 citations73
US10163483B2Dec 25, 2018
Dynamic reference voltage determination
MICRON TECHNOLOGY INC2 citations73
US9934837B2Apr 3, 2018
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC2 citations73
US9847117B1Dec 19, 2017
Dynamic reference voltage determination
MICRON TECHNOLOGY INC4 citations73
US10068629B2Sep 4, 2018
Ferroelectric memory cell sensing
MICRON TECHNOLOGY INC1 citations63
US12547511B2Feb 10, 2026
Storing memory array operational information in non-volatile subarrays
MICRON TECHNOLOGY INC0 citations62
US12406712B2Sep 2, 2025
Sensing scheme for a memory with shared sense components
MICRON TECHNOLOGY INC0 citations62
US12158826B2Dec 3, 2024
Storing memory array operational information in non-volatile subarrays
MICRON TECHNOLOGY INC0 citations62
US11915735B2Feb 27, 2024
Sensing scheme for a memory with shared sense components
MICRON TECHNOLOGY INC0 citations62
US11501815B2Nov 15, 2022
Sensing scheme for a memory with shared sense components
MICRON TECHNOLOGY INC0 citations62
US11475934B2Oct 18, 2022
Ferroelectric memory cell sensing
MICRON TECHNOLOGY INC0 citations62
US11392468B2Jul 19, 2022
Storing memory array operational information in non-volatile subarrays
MICRON TECHNOLOGY INC0 citations62
US11238913B2Feb 1, 2022
Cell-based reference voltage generation
MICRON TECHNOLOGY INC0 citations62
US11200937B2Dec 14, 2021
Reprogrammable non-volatile ferroelectric latch for use with a memory controller
MICRON TECHNOLOGY INC0 citations62
US11056165B2Jul 6, 2021
Cell-specific reference generation and sensing
MICRON TECHNOLOGY INC0 citations62
US10950286B2Mar 16, 2021
Periphery fill and localized capacitance
MICRON TECHNOLOGY INC0 citations62
US10978126B2Apr 13, 2021
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC0 citations59
US10825501B2Nov 3, 2020
Pre-writing memory cells of an array
MICRON TECHNOLOGY INC0 citations52
US10706907B2Jul 7, 2020
Cell-specific referenece generation and sensing
MICRON TECHNOLOGY INC0 citations52
US10607677B2Mar 31, 2020
Cell-based reference voltage generation
MICRON TECHNOLOGY INC0 citations52
US10559339B2Feb 11, 2020
Periphery fill and localized capacitance
MICRON TECHNOLOGY INC0 citations52
US10431284B2Oct 1, 2019
Dynamic reference voltage determination
MICRON TECHNOLOGY INC0 citations52
US10418084B2Sep 17, 2019
Pre-writing memory cells of an array
MICRON TECHNOLOGY INC0 citations52
US10388354B2Aug 20, 2019
Pre-writing memory cells of an array
MICRON TECHNOLOGY INC0 citations52
US10372566B2Aug 6, 2019
Storing memory array operational information in nonvolatile subarrays
MICRON TECHNOLOGY INC0 citations52
US10163482B2Dec 25, 2018
Ground reference scheme for a memory cell
MICRON TECHNOLOGY INC0 citations52
US10153023B2Dec 11, 2018
Cell-based reference voltage generation
MICRON TECHNOLOGY INC0 citations52
US9892777B2Feb 13, 2018
Cell-based reference voltage generation
MICRON TECHNOLOGY INC0 citations52