Inventor · disambiguated record
Wei-Shan Liao
Also filed as: LIAO WEI-SHAN
10 granted patents·21 citations·filing 2010–2014
84Inventor score
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10 records- 0180US8786362B1Schottky diode having current leakage protection structure and current leakage protecting method of the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jul 22, 2014·6 cites·15 claims
- 0274US8482063B2High voltage semiconductor deviceLIN AN-HUNG·Filed 2011·Granted Jul 9, 2013·5 cites·13 claims
- 0364US8643104B1Lateral diffusion metal oxide semiconductor transistor structureLIAO WEI-SHAN·Filed 2012·Granted Feb 4, 2014·3 cites·14 claims
- 0464US8581338B2Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereofLIN AN-HUNG·Filed 2011·Granted Nov 12, 2013·2 cites·8 claims
- 0563US9202939B2Schottky diode and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 1, 2015·1 cites·20 claims
- 0663US8450801B2Lateral-diffusion metal-oxide-semiconductor deviceLin hong-ze·Filed 2010·Granted May 28, 2013·3 cites·19 claims
- 0753US8587058B2Lateral diffused metal-oxide-semiconductor deviceLIN AN-HUNG·Filed 2012·Granted Nov 19, 2013·1 cites·11 claims
- 0849US8803235B2Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 12, 2014·0 cites·15 claims
- 0946US9455319B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 27, 2016·0 cites·18 claims
- 1043US9590039B2Semiconductor structure and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 7, 2017·0 cites·9 claims
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