Inventor
CHUNG HOI-JU
KR47 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HOI-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS10037244B2Jul 31, 2018
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD23 citations94
US10002045B2Jun 19, 2018
Semiconductor memory devices having input/output gating circuit and memory systems including the same
SAMSUNG ELECTRONICS CO LTD38 citations94
US10705908B2Jul 7, 2020
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD7 citations84
US10127974B2Nov 13, 2018
Memory device and memory system performing request-based refresh, and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US10044475B2Aug 7, 2018
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD6 citations84
US9990163B2Jun 5, 2018
Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US9940991B2Apr 10, 2018
Memory device and memory system performing request-based refresh, and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD5 citations84
US9805827B2Oct 31, 2017
Semiconductor memory devices, memory systems including the same and methods of operating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US9727412B2Aug 8, 2017
Memory device having error notification function
SAMSUNG ELECTRONICS CO LTD10 citations84
US10684793B2Jun 16, 2020
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations83
US9953725B2Apr 24, 2018
Semiconductor memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD16 citations83
US9135994B2Sep 15, 2015
Nonvolatile memory device having read circuits for performing Read-While-Write (RWW) operation and Read-Modify-Write (RMW) operation
SAMSUNG ELECTRONICS CO LTD7 citations83
US11231996B2Jan 25, 2022
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD1 citations73
US10929225B2Feb 23, 2021
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD2 citations73
US10355833B2Jul 16, 2019
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD3 citations73
US10255989B2Apr 9, 2019
Semiconductor memory devices, memory systems including the same and methods of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10198221B2Feb 5, 2019
Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US9875155B2Jan 23, 2018
Memory device for performing error correction code operation and redundancy repair operation
SAMSUNG ELECTRONICS CO LTD3 citations73
US10156995B2Dec 18, 2018
Semiconductor memory devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US10127102B2Nov 13, 2018
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11994948B2May 28, 2024
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD0 citations63
US11593199B2Feb 28, 2023
Semiconductor memory devices, memory systems including the same and methods of operating memory systems
SAMSUNG ELECTRONICS CO LTD0 citations63
US11239960B2Feb 1, 2022
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50830EMar 17, 2026
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US10855412B2Dec 1, 2020
Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems
SAMSUNG ELECTRONICS CO LTD0 citations52
US10090066B2Oct 2, 2018
Semiconductor memory devices, memory systems including the same and method of correcting errors in the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9299429B2Mar 29, 2016
Nonvolatile memory device using a resistance material and a driving method thereof
SAMSUNG ELECTRONICS CO LTD1 citations51
US9093146B2Jul 28, 2015
Nonvolatile memory device and related method for reducing access latency
SAMSUNG ELECTRONICS CO LTD0 citations51
US10191805B2Jan 29, 2019
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations42
CHUNG HOI-JU
4 patentsUS9588840B2Mar 7, 2017
Memory devices that perform masked write operations and methods of operating the same
CHUNG HOI-JU19 citations83
US9164834B2Oct 20, 2015
Semiconductor memory devices, memory systems including the same and method of writing data in the same
CHUNG HOI-JU8 citations83
US9632856B2Apr 25, 2017
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
CHUNG HOI-JU8 citations82
US9268636B2Feb 23, 2016
Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
CHUNG HOI-JU10 citations82
SK HYNIX INC
4 patentsUS11514998B2Nov 29, 2022
Electronic device for performing data masking operation
SK HYNIX INC2 citations73
US11797215B2Oct 24, 2023
Memory device and memory system performing error check and scrub operation
SK HYNIX INC3 citations70
US11928026B2Mar 12, 2024
Memory and operation method of memory
SK HYNIX INC0 citations61
US11698835B2Jul 11, 2023
Memory and operation method of memory
SK HYNIX INC0 citations61