P

Inventor

CHUNG HOI-JU

KR47 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HOI-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US10037244B2Jul 31, 2018

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD23 citations94
US10002045B2Jun 19, 2018

Semiconductor memory devices having input/output gating circuit and memory systems including the same

SAMSUNG ELECTRONICS CO LTD38 citations94
US10705908B2Jul 7, 2020

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD7 citations84
US10127974B2Nov 13, 2018

Memory device and memory system performing request-based refresh, and operating method of the memory device

SAMSUNG ELECTRONICS CO LTD7 citations84
US10044475B2Aug 7, 2018

Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems

SAMSUNG ELECTRONICS CO LTD6 citations84
US9990163B2Jun 5, 2018

Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US9940991B2Apr 10, 2018

Memory device and memory system performing request-based refresh, and operating method of the memory device

SAMSUNG ELECTRONICS CO LTD5 citations84
US9805827B2Oct 31, 2017

Semiconductor memory devices, memory systems including the same and methods of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US9727412B2Aug 8, 2017

Memory device having error notification function

SAMSUNG ELECTRONICS CO LTD10 citations84
US10684793B2Jun 16, 2020

Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD4 citations83
US9953725B2Apr 24, 2018

Semiconductor memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD16 citations83
US9135994B2Sep 15, 2015

Nonvolatile memory device having read circuits for performing Read-While-Write (RWW) operation and Read-Modify-Write (RMW) operation

SAMSUNG ELECTRONICS CO LTD7 citations83
US11231996B2Jan 25, 2022

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD1 citations73
US10929225B2Feb 23, 2021

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD2 citations73
US10355833B2Jul 16, 2019

Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems

SAMSUNG ELECTRONICS CO LTD3 citations73
US10255989B2Apr 9, 2019

Semiconductor memory devices, memory systems including the same and methods of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10198221B2Feb 5, 2019

Methods of operating semiconductor memory devices with selective write-back of data for error scrubbing and related devices

SAMSUNG ELECTRONICS CO LTD4 citations73
US9875155B2Jan 23, 2018

Memory device for performing error correction code operation and redundancy repair operation

SAMSUNG ELECTRONICS CO LTD3 citations73
US10156995B2Dec 18, 2018

Semiconductor memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US10127102B2Nov 13, 2018

Semiconductor memory devices and memory systems including the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11994948B2May 28, 2024

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD0 citations63
US11593199B2Feb 28, 2023

Semiconductor memory devices, memory systems including the same and methods of operating memory systems

SAMSUNG ELECTRONICS CO LTD0 citations63
US11239960B2Feb 1, 2022

Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50830EMar 17, 2026

Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US10855412B2Dec 1, 2020

Characterization of in-chip error correction circuits and related semiconductor memory devices/memory systems

SAMSUNG ELECTRONICS CO LTD0 citations52
US10090066B2Oct 2, 2018

Semiconductor memory devices, memory systems including the same and method of correcting errors in the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US9299429B2Mar 29, 2016

Nonvolatile memory device using a resistance material and a driving method thereof

SAMSUNG ELECTRONICS CO LTD1 citations51
US9093146B2Jul 28, 2015

Nonvolatile memory device and related method for reducing access latency

SAMSUNG ELECTRONICS CO LTD0 citations51
US10191805B2Jan 29, 2019

Semiconductor memory devices and memory systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations42

CHUNG HOI-JU

4 patents

SK HYNIX INC

4 patents

JEON SEONG HYUN

2 patents

KIM YOUNG-IL

1 patent

SAMSUNG ELECTRONICS LTD

1 patent

CHA SANG-UHN

1 patent

KIM SEO-HEE

1 patent

LEE KWANG JIN

1 patent

MIN BYUNG JUN

1 patent

CHOI JOON-YONG

1 patent

MIN BYUNG-JUN

1 patent